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http://hdl.handle.net/10119/12902
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| タイトル: | Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping |
| 著者: | Shih, Hong-An
Kudo, Masahiro
Suzuki, Toshi-kazu |
| 発行日: | 2012-07-24 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 101 |
| 号: | 4 |
| 開始ページ: | 043501-1 |
| 終了ページ: | 043501-4 |
| DOI: | 10.1063/1.4737876 |
| 抄録: | AlN/AlGaN/GaN metal-insulator-semiconductor(MIS) structure is analyzed by using capacitance-frequency-temperature (C-f-T) mapping. Applying sputtering-deposited AlN, we attained AlN/AlGaN/GaN MIS heterostructure field-effect transistors with much suppressed gate leakage currents, but exhibiting frequency dispersion in C-V characteristics owing to high-density AlN/AlGaN interface states. In order to investigate the interface states deteriorating the device performance, we measured temperature-dependent frequency dispersion in the C-V characteristics. As a result, we obtained C-f-T mapping, whose analysis gives the activation energies of electron trapping, namely the interface state energy levels, for a wide range of the gate biases. This analysis method is auxiliary to the conventional conductance method, serving as a valuable tool for characterization of wide-bandgap devices with deep interface states. From the analysis, we can directly evaluate the gate-control efficiency of the devices. |
| Rights: | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Hong-An Shih, Masahiro Kudo and Toshi-kazu Suzuki, Applied Physics Letters, 101(4), 043501 (2012) and may be found at http://dx.doi.org/10.1063/1.4737876 |
| URI: | http://hdl.handle.net/10119/12902 |
| 資料タイプ: | publisher |
| 出現コレクション: | g10-1. 雑誌掲載論文 (Journal Articles)
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