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タイトル: Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices
著者: Le, Son Phuong
Nguyen, Tuan Quy
Shih, Hong-An
Kudo, Masahiro
Suzuki, Toshi-kazu
発行日: 2014-08-07
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 116
号: 5
開始ページ: 54510-1
終了ページ: 54510-8
DOI: 10.1063/1.4892486
抄録: We have systematically investigated low-frequency noise (LFN) in AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) devices, where the AlN gate insulator layer was sputtering-deposited on the AlGaN surface, in comparison with LFN in AlGaN/GaN Schottky devices. By measuring LFN in ungated two-terminal devices and heterojunction field-effect transistors (HFETs), we extracted LFN characteristics in the intrinsic gated region of the HFETs. Although there is a bias regime of the Schottky-HFETs in which LFN is dominated by the gate leakage current, LFN in the MIS-HFETs is always dominated by only the channel current. Analyzing the channel-current-dominated LFN, we obtained Hooge parameters α for the gated region as a function of the sheet electron concentration n _s under the gate. In a regime of small n_s, both the MIS- and Schottky-HFETs exhibit α∝ns^<−1> . On the other hand, in a middle n_s regime of the MIS-HFETs, α decreases rapidly liken_s^<−ξ> with ξ ∼ 2-3, which is not observed for the Schottky-HFETs. In addition, we observe strong increase in α∝n_s^3 in a largen_ s regime for both the MIS- and Schottky-HFETs.
Rights: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Son Phuong Le, Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, and Toshi-kazu Suzuki, Journal of Applied Physics, 116(5), 54510- (2014) and may be found at http://dx.doi.org/10.1063/1.4892486
URI: http://hdl.handle.net/10119/12903
資料タイプ: publisher
出現コレクション:f10-1. 雑誌掲載論文 (Journal Articles)

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