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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/12904

タイトル: Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices
著者: Shih, Hong-An
Kudo, Masahiro
Suzuki, Toshi-kazu
発行日: 2014-11-14
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 116
号: 18
開始ページ: 184507-1
終了ページ: 184507-9
DOI: 10.1063/1.4901290
抄録: We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.
Rights: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Hong-An Shih, Masahiro Kudo, and Toshi-kazu Suzuki, Journal of Applied Physics, 116(18), 184507 (2014) and may be found at http://dx.doi.org/10.1063/1.4901290
URI: http://hdl.handle.net/10119/12904
資料タイプ: publisher
出現コレクション:f10-1. 雑誌掲載論文 (Journal Articles)

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