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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12907

Title: Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates
Authors: Suzuki, Toshi-kazu
Hayato Takita
Cong Thanh Nguyen
Iiyama, Koichi
Issue Date: 2012-10-02
Publisher: American Institute of Physics
Magazine name: AIP Advances
Volume: 2
Number: 4
Start page: 042105-1
End page: 042105-6
DOI: 10.1063/1.4757943
Abstract: We investigated carrier recombination in InAs thin films obtained by epitaxial lift-off and van der Waals bonding on low-k flexible substrates. Photoconductors are fabricated from the InAsthin films bonded on flexible substrates, and also from films grown on GaAs(001) substrates. By irradiation of 1.55-μm-wavelength laser light with intensity modulation, we characterized frequency responses of the InAsphotoconductors by S-parameter measurements. From an analysis of the frequency dependence of the S-parameters, we obtained carrier recombination lifetimes, which are long for the InAsthin films bonded on flexible substrates in comparison with those grown on GaAs(001), attributed to the lower dislocation density in the former.
Rights: © Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. The following article appeared in Toshi-kazu Suzuki, Hayato Takita, Cong Thanh Nguyen and Koichi Iiyama, AIP Advances, 2(4), 042105 (2012) and may be found at http://dx.doi.org/10.1063/1.4757943
URI: http://hdl.handle.net/10119/12907
Material Type: publisher
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

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