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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/12911

タイトル: On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process
著者: Bui, H. Van
Wiggers, F. B.
Friedlein, R.
Yamada-Takamura, Y.
Kovalgin, A. Y.
Jong, M. P. de
発行日: 2015-02-09
出版者: American Institute of Physics
誌名: The Journal of Chemical Physics
巻: 142
号: 6
開始ページ: 064702-1
終了ページ: 064702-5
DOI: 10.1063/1.4907375
抄録: Since epitaxial silicene is not chemically inert under ambient conditions, its application in devices and the ex-situ characterization outside of ultrahigh vacuum environments require the use of an insulating capping layer. Here, we report on a study of the feasibility of encapsulating epitaxial silicene on ZrB_2(0001) thin films grown on Si(111) substrates by aluminum nitride (AlN) deposited using trimethylaluminum (TMA) and ammonia (NH_3) precursors. By in-situ high-resolution core-level photoelectron spectroscopy, the chemical modifications of the surface due to subsequent exposure to TMA and NH_3 molecules, at temperatures of 300 °C and 400 °C, respectively, have been investigated. While an AlN-related layer can indeed be grown, silicene reacts strongly with both precursor molecules resulting in the formation of Si–C and Si–N bonds such that the use of these precursors does not allow for the protective AlN encapsulation that leaves the electronic properties of silicene intact.
Rights: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H. Van Bui, F. B. Wiggers, R. Friedlein, Y. Yamada-Takamura, A. Y. Kovalgin, and M. P. de Jong, The Journal of Chemical Physics, 142(6), 064702 (2015) and may be found at http://dx.doi.org/10.1063/1.4907375
URI: http://hdl.handle.net/10119/12911
資料タイプ: publisher
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

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