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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/13801

Title: Single-domain epitaxial silicene on diboride thin films
Authors: Fleurence, Antoine
Gill, T. G.
Friedlein, R.
Sadowski, J. T.
Aoyagi, K.
Copel, M.
Tromp, R. M.
Hirjibehedin, C. F.
Takamura, Yukiko
Keywords: silicene
Issue Date: 2016-04-12
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 108
Number: 15
Start page: 151902-1
End page: 151902-5
DOI: 10.1063/1.4945370
Abstract: Epitaxial silicene, which forms spontaneously on ZrB2(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. The realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.
Rights: Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in A. Fleurence, T. G. Gill, R. Friedlein, J. T. Sadowski, K. Aoyagi, M. Copel, R. M. Tromp, C. F. Hirjibehedin, and Y. Yamada-Takamura, Applied Physics Letters, 108(15), 151902 (2016) and may be found at http://dx.doi.org/10.1063/1.4945370
URI: http://hdl.handle.net/10119/13801
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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