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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/14314

Title: 半導体液体プロセスにおける微視的濡れ性制御:計算科学的アプローチ
Other Titles: Computational approaches to microscopic control of wettability in liquid processes for fabricating semiconductors
Authors: 本郷, 研太
Authors(alternative): Hongo, Kenta
Keywords: 表面・界面物性
Issue Date: 5-Jun-2017
Abstract: 本研究は、濡れ性を支配する分子力場パラメータ(ハマカー定数)を、第一原理算定する新規手法を開発した。信頼性の高い第一原理計算法と組み合わせることで、ベンゼンのベンチマーク計算は、実験をよく再現し、当該手法の妥当性を検証できた。当該手法を、アモルファスシリコン薄膜の前駆体インクであるシクロヘキサシランに応用することで、実験参照のない当該系のハマカー定数に対して、信頼性の高い計算科学参照値を得た。当該手法は、実プロセスに現れる実用分子系に対して信頼性の高い力場パラメータを供する汎用手法であり、液体プロセス技術の実用化に向けた最重要課題の一つである、濡れ性制御の動力学解析を可能にすると期待される。:We have proposed a new ab initio scheme to evaluate the Hamaker constant that is industrially useful for wettability control. Combined with our highly accurate ab initio method, the scheme applied to benzene as benchmark provided an accurate value of the constant comparable with experiments, which validates our scheme. We also applied the scheme to cyclohexasilane that is used as precursor ink to fabricate amorphous silicon thin films, getting a physically reasonable value of Hamaker constant. Thus, our developed methodology can be expected to make it possible to carry out various molecular dynamics simulations for wettability analysis of ink droplets. Such simulations would be necessary toward practical application of the next-generation liquid process (printed electronics) that is a more saving and lower environmental impact technique for fabricating various type of semiconductors, without using an expensive vacuum equipment in the conventional processes.
Description: 若手研究(B)
Language: jpn
URI: http://hdl.handle.net/10119/14314
Appears in Collections:2016年度 (FY 2016)

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