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Title: | Insights into the spontaneous formation of silicene sheet on diboride thin films |
Authors: | Fleurence, A. Yamada-Takamura, Y. |
Keywords: | silicene two-dimensional materials sputtering diboride |
Issue Date: | 2017-01-23 |
Publisher: | American Institute of Physics |
Magazine name: | Applied Physics Letters |
Volume: | 110 |
Number: | 4 |
Start page: | 041601-1 |
End page: | 041601-4 |
DOI: | 10.1063/1.4974467 |
Abstract: | The realization of silicene-free ZrB_2(0001) thin films grown on Si(111) by Ar^+ ion bombardment allowed for studying the spontaneous formation of silicene on their surfaces. Imaging the bare ZrB_2(0001) surface by STM revealed the structures of Zr-terminated and B-terminated ZrB_2(0001) created by the bombardment. The spontaneous formation of a continuous silicene sheet on asputtering-induced disordered ZrB_2 surface demonstrates that silicene does not require an atomically-flat crystalline template to be stabilized. This opens the way to the fabrication of large scale single-crystal sheets and points out the potential of silicene to be used in the next generation silicon-based technologies. |
Rights: | Copyright 2017 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in A. Fleurence and Y. Yamada-Takamura, Applied Physics Letters, 110(4), 041601 (2017) and may be found at http://dx.doi.org/10.1063/1.4974467 |
URI: | http://hdl.handle.net/10119/14720 |
Material Type: | publisher |
Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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