JAIST Repository >
c. マテリアルサイエンス研究科・マテリアルサイエンス系 >
c10. 学術雑誌論文等 >
c10-1. 雑誌掲載論文 >

このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/14720

タイトル: Insights into the spontaneous formation of silicene sheet on diboride thin films
著者: Fleurence, A.
Yamada-Takamura, Y.
キーワード: silicene
two-dimensional materials
発行日: 2017-01-23
出版者: American Institute of Physics
誌名: Applied Physics Letters
巻: 110
号: 4
開始ページ: 041601-1
終了ページ: 041601-4
DOI: 10.1063/1.4974467
抄録: The realization of silicene-free ZrB_2(0001) thin films grown on Si(111) by Ar^+ ion bombardment allowed for studying the spontaneous formation of silicene on their surfaces. Imaging the bare ZrB_2(0001) surface by STM revealed the structures of Zr-terminated and B-terminated ZrB_2(0001) created by the bombardment. The spontaneous formation of a continuous silicene sheet on asputtering-induced disordered ZrB_2 surface demonstrates that silicene does not require an atomically-flat crystalline template to be stabilized. This opens the way to the fabrication of large scale single-crystal sheets and points out the potential of silicene to be used in the next generation silicon-based technologies.
Rights: Copyright 2017 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in A. Fleurence and Y. Yamada-Takamura, Applied Physics Letters, 110(4), 041601 (2017) and may be found at http://dx.doi.org/10.1063/1.4974467
URI: http://hdl.handle.net/10119/14720
資料タイプ: publisher
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)


ファイル 記述 サイズ形式
23069.pdf1242KbAdobe PDF見る/開く



お問い合わせ先 : 北陸先端科学技術大学院大学 研究推進課図書館情報係