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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15279

Title: A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB_2
Authors: Wiggers, F. B.
Bui, H. Van
Friedlein, R.
Yamada-Takamura,Y.
Schmitz, J.
Kovalgin, A. Y.
de Jong, M. P.
Keywords: silicene
two-dimensional materials
encapsulation
Issue Date: 2016-04-05
Publisher: American Institute of Physics
Magazine name: The Journal of Chemical Physics
Volume: 144
Number: 13
Start page: 134703-1
End page: 134703-5
DOI: 10.1063/1.4944579
Abstract: We present a method for the formation of an epitaxial  surface layer involving B, N, and Si atoms on a ZrB_2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB_2  surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH_3 at 400 °C leads to surface  nitridation, and subsequent annealing up to 830 °C results in a solid phase reaction with the ZrB_2 subsurface layers. In this way, a new nitride-based epitaxial  surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.
Rights: Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. B. Wiggers, H. Van Bui, R. Friedlein, Y. Yamada-Takamura, J. Schmitz, A. Y. Kovalgin, and M. P. de Jong, The Journal of Chemical Physics, 144(13), 134703 (2016) and may be found at http://dx.doi.org/10.1063/1.4944579
URI: http://hdl.handle.net/10119/15279
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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