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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/15279
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| タイトル: | A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB_2 |
| 著者: | Wiggers, F. B.
Bui, H. Van
Friedlein, R.
Yamada-Takamura,Y.
Schmitz, J.
Kovalgin, A. Y.
de Jong, M. P. |
| キーワード: | silicene
two-dimensional materials
encapsulation |
| 発行日: | 2016-04-05 |
| 出版者: | American Institute of Physics |
| 誌名: | The Journal of Chemical Physics |
| 巻: | 144 |
| 号: | 13 |
| 開始ページ: | 134703-1 |
| 終了ページ: | 134703-5 |
| DOI: | 10.1063/1.4944579 |
| 抄録: | We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB_2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB_2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH_3 at 400 °C leads to surface nitridation, and subsequent annealing up to 830 °C results in a solid phase reaction with the ZrB_2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation. |
| Rights: | Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. B. Wiggers, H. Van Bui, R. Friedlein, Y. Yamada-Takamura, J. Schmitz, A. Y. Kovalgin, and M. P. de Jong, The Journal of Chemical Physics, 144(13), 134703 (2016) and may be found at http://dx.doi.org/10.1063/1.4944579 |
| URI: | http://hdl.handle.net/10119/15279 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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