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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15424

Title: Passivation of textured crystalline silicon surfaces by catalytic CVD silicon nitride films and catalytic phosphorus doping
Authors: Ohdaira, Keisuke
Cham, Trinh Thi
Matsumura, Hideki
Keywords: Crystalline silicon solar cell
Passivation
Silicon nitride
Cat-doping
Cat-CVD
Issue Date: 2017-09-11
Publisher: The Japan Society of Applied Physics
Magazine name: Japanese Journal of Applied Physics
Volume: 56
Number: 10
Start page: 102301-1
End page: 102301-4
DOI: 10.7567/JJAP.56.102301
Abstract: Silicon nitride (SiN_x) films formed by catalytic chemical vapor deposition (Cat-CVD) and phosphorus-doped layers formed by catalytic impurity doping (Cat-doping) are applied for the passivation of pyramid-shaped textured crystalline Si (c-Si) surfaces formed by anisotropic etching in alkaline solution. Lower surface recombination velocities (SRVs) tend to be obtained when smaller pyramids are formed on c-Si surfaces. Phosphorus Cat-doping is effective for reducing the SRV of textured c-Si surfaces as in the case of flat c-Si surfaces. We realize SRVs of textured c-Si surfaces of ~8.0 and ~6.7 cm/s for only SiN_x passivation and for the combination of SiN_x and P Cat-doping, respectively. These structures also have optical transparency and low Auger recombination loss, and are of great worth in application for the surface passivation of interdigitated back-contact c-Si solar cells.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2017 The Japan Society of Applied Physics. Keisuke Ohdaira, Trinh Thi Cham and Hideki Matsumura, Japanese Journal of Applied Physics, 56(10), 2017, 102301-1-102301-4. http://dx.doi.org/10.7567/JJAP.56.102301
URI: http://hdl.handle.net/10119/15424
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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