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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/15424

タイトル: Passivation of textured crystalline silicon surfaces by catalytic CVD silicon nitride films and catalytic phosphorus doping
著者: Ohdaira, Keisuke
Cham, Trinh Thi
Matsumura, Hideki
キーワード: Crystalline silicon solar cell
Passivation
Silicon nitride
Cat-doping
Cat-CVD
発行日: 2017-09-11
出版者: The Japan Society of Applied Physics
誌名: Japanese Journal of Applied Physics
巻: 56
号: 10
開始ページ: 102301-1
終了ページ: 102301-4
DOI: 10.7567/JJAP.56.102301
抄録: Silicon nitride (SiN_x) films formed by catalytic chemical vapor deposition (Cat-CVD) and phosphorus-doped layers formed by catalytic impurity doping (Cat-doping) are applied for the passivation of pyramid-shaped textured crystalline Si (c-Si) surfaces formed by anisotropic etching in alkaline solution. Lower surface recombination velocities (SRVs) tend to be obtained when smaller pyramids are formed on c-Si surfaces. Phosphorus Cat-doping is effective for reducing the SRV of textured c-Si surfaces as in the case of flat c-Si surfaces. We realize SRVs of textured c-Si surfaces of ~8.0 and ~6.7 cm/s for only SiN_x passivation and for the combination of SiN_x and P Cat-doping, respectively. These structures also have optical transparency and low Auger recombination loss, and are of great worth in application for the surface passivation of interdigitated back-contact c-Si solar cells.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2017 The Japan Society of Applied Physics. Keisuke Ohdaira, Trinh Thi Cham and Hideki Matsumura, Japanese Journal of Applied Physics, 56(10), 2017, 102301-1-102301-4. http://dx.doi.org/10.7567/JJAP.56.102301
URI: http://hdl.handle.net/10119/15424
資料タイプ: author
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

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