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大平 圭介(オオダイラ ケイスケ)准教授研究者総覧

No.書籍情報
1 Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiN_x and SiN_x/P catalytic-doped layers / Thi, Trinh Cham, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Japanese Journal of Applied Physics, 55(2S), pp.02BF09-1-02BF09-6, 2016-01-22, The Japan Society of Applied Physics
2 Application of crystalline silicon surface oxidation to silicon heterojunction solar cells / Oikawa, Takafumi, Ohdaira, Keisuke, Higashimine, Koichi, Matsumura, Hideki, Current Applied Physics, 15(10), pp.1168-1172, 2015-07-07, Elsevier
3 Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms / Tsuzaki, Shogo, Ohdaira, Keisuke, Oikawa, Takafumi, Koyama, Koichi, Matsumura, Hideki, Japanese Journal of Applied Physics, 54(7), pp.072301-1-072301-5, 2015-06-10, The Japan Society of Applied Physics
4 The control of the film stress of Cat-CVD a-Si films and its impact on explosive crystallization induced by flash lamp annealing / Ohdaira, Keisuke, Thin Solid Films, 575, pp.21-24, 2015-01-30, Elsevier
5 Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C / Matsumura, Hideki, Hayakawa, Taro, Ohta, Tatsunori, Nakashima, Yuki, Miyamoto, Motoharu, Trinh, Cham Thi, Koyama, Koichi, Ohdaira, Keisuke, Journal of Applied Physics, 116(11), pp.114502-1-114502-10, 2014-09-16, American Institute of Physics
6 Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiN_x films by introducing phosphorous catalytic-doped layer / Trinh, Cham Thi, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Journal of Applied Physics, 116(4), pp.044510-1-044510-7, 2014-07-28, American Institute of Physics
7 短時間結晶化を利用した次世代多結晶シリコン薄膜太陽電池作製技術の開発 / 大平, 圭介, 科学研究費助成事業研究成果報告書, pp.1-4, 2014-06-03
8 Effects of catalyst-generated atomic hydrogen treatment on amorphous silicon fabricated by Liquid-Si printing / Murayama, Hiroko, Ohyama, Tatsushi, Terakawa, Akira, Takagishi, Hideyuki, Masuda, Takashi, Ohdaira, Keisuke, Shimoda, Tatsuya, Japanese Journal of Applied Physics, 53(5S1), pp.05FM06-1-05FM06-4, 2014-04-22, The Japan Society of Applied Physics
9 Deposition of moisture barrier films by catalytic CVD using hexamethyldisilazane / Ohdaira, Keisuke, Matsumura, Hideki, Japanese Journal of Applied Physics, 53(5S1), pp.05FM03-1-05FM03-4, 2014-04-02, The Japan Society of Applied Physics
10 A Method to Evaluate Explosive Crystallization Velocity of Amorphous Silicon Films during Flash Lamp Annealing / Ohdaira, Keisuke, Canadian Journal of Physics, 92(7/8), pp.718-722, 2014-02-25, NRC Research Press
11 Effect of Annealing and Hydrogen Radical Treatment on the Structure of Solution-Processed Hydrogenated Amorphous Silicon Films / Sakuma, Yoo, Ohdaira, Keisuke, Masuda, Takashi, Takagishi, Hideyuki, Shen, Zhongrong, Shimoda, Tatsuya, Japanese Journal of Applied Physics, 53(4S), pp.04ER07-1-04ER07-5, 2014-02-14, The Japan Society of Applied Physics
12 Passivation quality of a stoichiometric SiN_x single passivation layer on crystalline silicon prepared by catalytic chemical vapor deposition and successive annealing / Thi, Trinh Cham, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Japanese Journal of Applied Physics, 53(2), pp.022301-1-022301-6, 2014-01-22, The Japan Society of Applied Physics
13 Formation of vertical concentration gradients in poly(3-hexylthiophene-2,5-diyl): Phenyl-C_<61>-butyric acid methyl ester-graded bilayer solar cells / Vohra, Varun, Higashimine, Koichi, Tsuzaki, Shogo, Ohdaira, Keisuke, Murata, Hideyuki, Thin Solid Films, 554, pp.41-45, 2013-06-18, Elsevier
14 Defect Termination of Flash-Lamp-Crystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing / Ohdaira, Keisuke, Japanese Journal of Applied Physics, 52(4), pp.04CR11-1-04CR11-4, 2013-04-22, The Japan Society of Applied Physics
15 Flash-lamp-induced explosive crystallization of amorphous germanium films leaving behind periodic microstructures / Ohdaira, Keisuke, Matsumura, Hideki, Thin Solid Films, 524, pp.161-165, 2012-10-23, Elsevier
16 Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization / Ohdaira, Keisuke, Sawada, Keisuke, Usami, Noritaka, Varlamov, Sergey, Matsumura, Hideki, Japanese Journal of Applied Physics, 51(10), pp.10NB15-1-10NB15-4, 2012-10-22, The Japan Society of Applied Physics
17 Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers / Higashimine, Koichi, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Otsuka, N., Journal of Vacuum Science & Technology B, 30(3), pp.31208-1-31208-6, 2012-04-26, American Vacuum Society
18 Passivation characteristics of SiNx/a-Si and SiNx/Si-rich-SiNx stacked layers on crystalline silicon / Thi, Trinh Cham, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Solar Energy Materials and Solar Cells, 100, pp.169-173, 2012-02-06, Elsevier
19 Polycrystalline Silicon Films with Nanometer-Sized Dense Fine Grains Formed by Flash-Lamp-Induced Crystallization / Ohdaira, Keisuke, Ishii, Shohei, Tomura, Naohito, Matsumura, Hideki, Journal of Nanoscience and Nanotechnology, 12(1), pp.591-595, 2012-01-01, American Scientific Publishers
20 Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing / Ohdaira, Keisuke, Matsumura, Hideki, Journal of Crystal Growth, 362, pp.149-152, 2011-11-25, Elsevier
21 スパッタ非晶質シリコン膜の瞬間結晶化による高品質多結晶シリコン薄膜形成 / 大平, 圭介, 科学研究費補助金研究成果報告書, pp.1-4, 2011-04-01
22 Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing / Ohdaira, Keisuke, Ishii, Shohei, Tomura, Naohito, Matsumura, Hideki, Japanese Journal of Applied Physics, 50, pp.04DP01-1-04DP01-3, 2011, The Japan Society of Applied Physics
23 Advantage of Plasma-Less Deposition in Cat-CVD to the Performance of Electronic Devices / Matsumura, Hideki, Hasegawa, Tomoaki, Nishizaki, Shogo, Ohdaira, Keisuke, Thin Solid Films, 519(14), pp.4568-4570, 2011, Elsevier
24 Flash-Lamp-Crystallized Polycrystalline Silicon Films with High Hydrogen Concentration Formed from Cat-CVD a-Si Films / Ohdaira, Keisuke, Tomura, Naohito, Ishii, Shohei, Matsumura, Hideki, Thin Solid Films, 519(14), pp.4459-4461, 2011, Elsevier
25 Low Resistivity Metal Lines Formed by Functional Liquids and Successive Treatment of Catalytically Generated Hydrogen Atoms in Cat-CVD System / Kieu, Nguyen Thi Thanh, Ohdaira, Keisuke, Shimoda, Tatsuya, Matsumura, Hideki, Thin Solid Films, 519(14), pp.4565-4567, 2011, Elsevier
26 Extremely Low Recombination Velocity on Crystalline Silicon Surfaces Realized by Low-Temperature Impurity Doping in Cat-CVD Technology / Hayakawa, Taro, Miyamoto, Motoharu, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Thin Solid Films, 519(14), pp.4466-4468, 2011, Elsevier
27 Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers / Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Applied Physics Letters, 97(8), pp.082108-1-082108-3, 2010-08-26, AMERICAN INSTITUTE OF PHYSICS
28 Novel technique for formation of metal lines by functional liquid containing metal nanoparticles and reduction of their resistivity by hydrogen treatment / Nguyen, Thi Thanh Kieu, Ohdaira, Keisuke, Shimoda, Tatsuya, Matsumura, Hideki, Journal of Vacuum Science and Technology B, 28(4), pp.775-782, 2010-07-07, American Vacuum Society
29 Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films / Endo, Yohei, Fujiwara, Tomoko, Ohdaira, Keisuke, Nishizaki, Shogo, Nishioka, Kensuke, Matsumura, Hideki, Thin Solid Films, 518(17), pp.5003-5006, 2010-06-30, Elsevier
30 Variation of Crystallization Mechanisms in Flash-Lamp-Irradiated Amorphous Silicon Films / Ohdaira, Keisuke, Nishikawa, Takuya, Matsumura, Hideki, Journal of Crystal Growth, 312(19), pp.2834-2839, 2010-06-25, Elsevier
31 Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing / Ohdaira, Keisuke, Fujiwara, Tomoko, Endo, Yohei, Shiba, Kazuhiro, Takemoto, Hiroyuki, Matsumura, Hideki, Japanese Journal of Applied Physics, 49, pp.04DP04-1-04DP04-3, 2010-04-20, The Japan Society of Applied Physics
32 Polycrystalline Si films with unique microstructures formed from amorphous Si films by non-thermal equilibrium flash lamp annealing / Ohdaira, Keisuke, Nishikawa, Takuya, Shiba, Kazuhiro, Takemoto, Hiroyuki, Matsumura, Hideki, physica status solidi (c), 7(3-4), pp.604-607, 2010-04, Wiley
33 Advantage of plasma-less deposition: Cat-CVD fabrication of a-Si TFT with current drivability equivalent to poly-Si TFT / Matsumura, Hideki, Ohdaira, Keisuke, Nishizaki, Shogo, physica status solidi (c), 7(3-4), pp.1132-1135, 2010-04, Wiley
34 Drastic suppression of the optical reflection of flash-lamp-crystallized poly-Si films with spontaneously formed periodic microstructures / Ohdaira, Keisuke, Nishikawa, Takuya, Shiba, Kazuhiro, Takemoto, Hiroyuki, Matsumura, Hideki, Thin Solid Films, 518(21), pp.6061-6065, 2010, Elsevier
35 Flash-lamp-crystallized Polycrystalline Silicon Films with Remarkably Long Minority Carrier Lifetimes / Ohdaira, Keisuke, Takemoto, Hiroyuki, Nishikawa, Takuya, Matsumura, Hideki, Current Applied Physics, 10(3), pp.S402-S405, 2010, Elsevier
36 Explosive crystallization of amorphous silicon films by flash lamp annealing / Ohdaira, Keisuke, Fujiwara, Tomoko, Endo, Yohei, Nishizaki, Shogo, Matsumura, Hideki, Journal of Applied Physics, 106(4), pp.044907-1-044907-8, 2009-08-25, American Institute of Physics
37 Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films / Ohdaira, Keisuke, Takemoto, Hiroyuki, Shiba, Kazuhiro, Matsumura, Hideki, Applied Physics Express, 2, pp.061201-1-061201-3, 2009-06-12, The Japan Society of Applied Physics
38 Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing / Ohdaira, Keisuke, Shiba, Kazuhiro, Takemoto, Hiroyuki, Fujiwara, Tomoko, Endo, Yohei, Nishizaki, Shogo, Jang, Young Rae, Matsumura, Hideki, Thin Solid Films, 517(12), pp.3472-3475, 2009-04-30, Elsevier
39 Formation of micrometer-order-thick poly-Si films on textured glass substrates by flash lamp annealing of a-Si films prepared by catalytic chemical vapor deposition / Ohdaira, K., Fujiwara, T., Endo, Y., Nishioka, K., Matsumura, H., Journal of Crystal Growth, 311(3), pp.769-772, 2009-01-15, Elsevier
40 Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing / Ohdaira, Keisuke, Fujiwara, Tomoko, Endo, Yohei, Nishizaki, Shogo, Matsumura, Hideki, Japanese Journal of Applied Physics, 47(11), pp.8239-8242, 2008-11-14, The Japan Society of Applied Physics
41 Thin film p-i-n poly-Si solar cells directly converted from p-i-n a-Si structures by a single shot of flash lamp / Ohdaira, Keisuke, Fujiwara, Tomoko, Endo, Yohei, Shiba, Kazuhiro, Takemoto, Hiroyuki, Nishizaki, Shogo, Jang, Young Rae, Nishioka, Kensuke, Matsumura, Hideki, 33rd IEEE Photovolatic Specialists Conference, 2008. PVSC '08., pp.1-3, 2008-05, Institute of Electrical and Electronics Engineers (IEEE)
42 Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films / Ohdaira, Keisuke, Abe, Yuki, Fukuda, Makoto, Nishizaki, Shogo, Usami, Noritaka, Nakajima, Kazuo, Karasawa, Takeshi, Torikai, Tetsuya, Matsumura, Hideki, Thin Solid Films, 516(5), pp.600-603, 2008-01-15, Elsevier
43 Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate / Ohdaira, Keisuke, Endo, Yohei, Fujiwara, Tomoko, Nishizaki, Shogo, Matsumura, Hideki, Japanese Journal of Applied Physics, 46(12), pp.7603-7606, 2007-12-06, The Japan Society of Applied Physics
44 High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition / Ohdaira, Keisuke, Nishizaki, Shogo, Endo, Yohei, Fujiwara, Tomoko, Usami, Noritaka, Nakajima, Kazuo, Matsumura, Hideki, Japanese Journal of Applied Physics, 46(11), pp.7198-7203, 2007-11-06, The Japan Society of Applied Physics
45 Improvement in the conversion efficiency of single-junction SiGe solar cells by international introduction of the compositional distribution / Tayanagi, Misumi, Usami, Noritaka, Pan, Wugen, Ohdaira, Keisuke, Fujiwara, Kozo, Nose, Yoshitaro, Nakajima, Kazuo, Journal of Applied Physics, 101(5), pp.054504-1-054504-6, 2007-03-02, American Institute of Physics

 


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