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OHDAIRA Keisuke ProfessorFaculty Profile

No.Bibliographical information
1 Thickness dependence of the passivation quality of Cat-CVD SiN_x films / Yuli, Wen, Ohdaira, Keisuke, Japanese Journal of Applied Physics, 59(SC), pp.SCCB07-1-SCCB07-4, 2019-12-04, IOP Publishing
2 Effect of a SiO_2 film on the potential-induced degradation of n-type front-emitter crystalline Si photovoltaic modules / Suzuki, Tomoyasu, Yamaguchi, Seira, Nakamura, Kyotaro, Masuda, Atsushi, Ohdaira, Keisuke, Japanese Journal of Applied Physics, 59(SC), pp.SCCD02-1-SCCD02-5, 2019-11-29, IOP Publishing
3 Fabrication of silicon heterojunction solar cells with a boron-doped a-Si:H layer formed by catalytic impurity doping / Akiyama, Katsuya, Ohdaira, Keisuke, AIP Advances, 9(11), pp.115013-1-115013-6, 2019-11-15, American Institute of Physics
4 Influence of backsheet materials on potential-induced degradation in n-type crystalline-silicon photovoltaic cell modules / Yamaguchi, Seira, Yamamoto, Chizuko, Masuda, Atsushi, Ohdaira, Keisuke, Japanese Journal of Applied Physics, 58(12), pp.120901-1-120901-3, 2019-11-06, IOP Publishing
5 爆発的結晶化による多結晶シリコン形成とその太陽電池応用 / 大平, 圭介, 科学研究費助成事業研究成果報告書, pp.1-5, 2019-06-13
6 新規低温ドーピング法を利用したシリコン太陽電池の革新的製造技術の開発 / 大平, 圭介, 科学研究費助成事業研究成果報告書, pp.1-4, 2019-06-12
7 Influence of sodium on the potential-induced degradation for n-type crystalline silicon photovoltaic modules / Ohdaira, Keisuke, Komatsu, Yutaka, Suzuki, Tomoyasu, Yamaguchi, Seira, Masuda, Atsushi, Applied Physics Express, 12(6), pp.064004-1-064004-4, 2019-05-14, IOP Publishing
8 Crystallization of electron beam evaporated a-Si films on textured glass substrates by flash lamp annealing / Kurata, Keisuke, Ohdaira, Keisuke, Japanese Journal of Applied Physics, 58(SB), pp.SBBF10-1-SBBF10-5, 2019-03-05, IOP Publishing
9 Vacuum deposition of CsPbI_3 layers on textured Si for Perovskite/Si tandem solar cells / Hamada, Keitaro, Yonezawa, Kyosuke, Yamamoto, Kohei, Taima, Tetsuya, Hayase, Shuzi, Ooyagi, Noboru, Yamamoto, Yuzo, Ohdaira, Keisuke, Japanese Journal of Applied Physics, 58(SB), pp.SBBF06-1-SBBF06-5, 2019-02-22, IOP Publishing
10 Improvement in the passivation quality of catalytic-chemical-vapor-deposited silicon nitride films on crystalline Si at room temperature / Miyaura, Jun'ichiro, Ohdaira, Keisuke, Thin Solid Films, 674, pp.103-106, 2019-02-07, Elsevier
11 Rapid progression and subsequent saturation of polarization-type potential-induced degradation of n-type front-emitter crystalline-silicon photovoltaic modules / Yamaguchi, Seira, Nakamura, Kyotaro, Masuda, Atsushi, Ohdaira, Keisuke, Japanese Journal of Applied Physics, 57(12), pp.122301-1-122301-6, 2018-11-12, IOP Publishing
12 Effect of evacuating a chamber on the degradation rate of solar cells in a cell-level potential-induced degradation test / Yamaguchi, Seira, Ohdaira, Keisuke, Japanese Journal of Applied Physics, 57(10), pp.108002-1-108002-2, 2018-08-29, IOP Publishing
13 High-quality surface passivation of crystalline silicon with chemical resistance and optical transparency by using catalytic chemical vapor deposition SiN_x layers and an ultrathin SiO_x film / Tu, Huynh Thi Cam, Koyama, Koichi, Nguyen, Cong Thanh, Ohdaira, Keisuke, Matsumura, Hideki, Japanese Journal of Applied Physics, 57(8S3), pp.08RB17-1-08RB17-4, 2018-07-17, IOP Publishing
14 Passivation effect of ultra-thin SiN_x films formed by catalytic chemical vapor deposition for crystalline silicon surface / Song, Hao, Ohdaira, Keisuke, Japanese Journal of Applied Physics, 57(8S3), pp.08RB03-1-08RB03-4, 2018-06-11, IOP Publishing
15 Comprehensive study of potential‐induced degradation in silicon heterojunction photovoltaic cell modules / Yamaguchi, Seira, Yamamoto, Chizuko, Ohdaira, Keisuke, Masuda, Atsushi, Progress in Photovoltaics, 26(9), pp.697-708, 2018-04-16, John Wiley & Sons, Ltd
16 Multistage performance deterioration in n-type crystalline silicon photovoltaic modules undergoing potential-induced degradation / Komatsu, Yutaka, Yamaguchi, Seira, Masuda, Atsushi, Ohdaira, Keisuke, Microelectronics Reliability, 84, pp.127-133, 2018-03-26, Elsevier
17 Effect of starting point formation on the crystallization of amorphous silicon films by flash lamp annealing / Sato, Daiki, Ohdaira, Keisuke, Japanese Journal of Applied Physics, 57(4S), pp.04FS05-1-04FS05-5, 2018-03-01, IOP Publishing
18 Direct observation of changes in the effective minority-carrier lifetime of SiNx-passivated n-type crystalline-silicon substrates caused by potential-induced degradation and recovery tests / Nishikawa, Naoyuki, Yamaguchi, Seira, Ohdaira, Keisuke, Microelectronics Reliability, 79, pp.91-95, 2017-11-05, Elsevier
19 Super water-repellent treatment of various cloths by deposition of catalytic-CVD polytetrafluoroethylene films / Matsumura, Hideki, Mishiro, Mai, Takachi, Michihisa, Ohdaira, Keisuke, Journal of Vacuum Science & Technology A, 35(6), pp.061514-, 2017-10-30, American Vacuum Society
20 Passivation of textured crystalline silicon surfaces by catalytic CVD silicon nitride films and catalytic phosphorus doping / Ohdaira, Keisuke, Cham, Trinh Thi, Matsumura, Hideki, Japanese Journal of Applied Physics, 56(10), pp.102301-1-102301-4, 2017-09-11, IOP Publishing
21 Degradation behavior of crystalline silicon solar cells in a cell-level potential-induced degradation test / Yamaguchi, Seira, Ohdaira, Keisuke, Solar Energy, 155, pp.739-744, 2017-07-13, Elsevier
22 Catalytic phosphorus and boron doping of amorphous silicon films for application to silicon heterojunction solar cells / Ohdaira, Keisuke, Seto, Junichi, Matsumura, Hideki, Japanese Journal of Applied Physics, 56(8S2), pp.08MB06-1-08MB06-5, 2017-07-04, IOP Publishing
23 Effect of antireflection coating on the crystallization of amorphous silicon films by flash lamp annealing / Sonoda, Yuki, Ohdaira, Keisuke, Japanese Journal of Applied Physics, 56(4S), pp.04CS10-1-04CS10-4, 2017-03-17, IOP Publishing
24 Indium tin oxide sputtering damage to catalytic chemical vapor deposited amorphous silicon passivation films and its recovery / Konishi, Takeo, Ohdaira, Keisuke, Thin Solid Films, 635, pp.73-77, 2017-01-12, Elsevier
25 Reduction in the short-circuit current density of silicon heterojunction photovoltaic modules subjected to potential-induced degradation tests / Yamaguchi, Seira, Yamamoto, Chizuko, Ohdaira, Keisuke, Masuda, Atsushi, Solar Energy Materials and Solar Cells, 161, pp.439-443, 2016-12-27, Elsevier
26 Progression of rapid potential-induced degradation of n-type single-crystalline silicon photovoltaic modules / Yamaguchi, Seira, Masuda, Atsushi, Ohdaira, Keisuke, Applied Physics Express, 9(11), pp.112301-1-112301-4, 2016-10-21, IOP Publishing
27 Suppression of the epitaxial growth of Si films in Si heterojunction solar cells by the formation of ultra-thin oxide layers / Ohdaira, Keisuke, Oikawa, Takafumi, Higashimine, Koichi, Matsumura, Hideki, Current Applied Physics, 16(9), pp.1026-1029, 2016-06-03, Elsevier
28 Changes in the current density-voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation / Yamaguchi, Seira, Masuda, Atsushi, Ohdaira, Keisuke, Solar Energy Materials and Solar Cells, 151, pp.113-119, 2016-03-24, Elsevier
29 Behavior of the potential-induced degradation of photovoltaic modules fabricated using flat mono-crystalline silicon cells with different surface orientations / Yamaguchi, Seira, Masuda, Atsushi, Ohdaira, Keisuke, Japanese Journal of Applied Physics, 55(4S), pp.04ES14-1-04ES14-5, 2016-03-24, IOP Publishing
30 Formation of amorphous silicon passivation films with high stability against postannealing, air exposure, and light soaking using liquid silicon / Guo, Cheng, Ohdaira, Keisuke, Takagishi, Hideyuki, Masuda, Takashi, Shen, Zhongrong, Shimoda, Tatsuya, Japanese Journal of Applied Physics, 55(4S), pp.04ES12-1-04ES12-4, 2016-03-22, IOP Publishing
31 Catalytic doping of phosphorus and boron atoms on hydrogenated amorphous silicon films / Seto, Junichi, Ohdaira, Keisuke, Matsumura, Hideki, Japanese Journal of Applied Physics, 55(4S), pp.04ES05-1-04ES05-4, 2016-03-03, IOP Publishing
32 Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiN_x and SiN_x/P catalytic-doped layers / Thi, Trinh Cham, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Japanese Journal of Applied Physics, 55(2S), pp.02BF09-1-02BF09-6, 2016-01-22, IOP Publishing
33 The formation of poly-Si films on flat glass substrates by flash lamp annealing / Watanabe, Taiki, Ohdaira, Keisuke, Thin Solid Films, 595(Part B), pp.235-238, 2015-08-06, Elsevier
34 Application of crystalline silicon surface oxidation to silicon heterojunction solar cells / Oikawa, Takafumi, Ohdaira, Keisuke, Higashimine, Koichi, Matsumura, Hideki, Current Applied Physics, 15(10), pp.1168-1172, 2015-07-07, Elsevier
35 Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms / Tsuzaki, Shogo, Ohdaira, Keisuke, Oikawa, Takafumi, Koyama, Koichi, Matsumura, Hideki, Japanese Journal of Applied Physics, 54(7), pp.072301-1-072301-5, 2015-06-10, IOP Publishing
36 The control of the film stress of Cat-CVD a-Si films and its impact on explosive crystallization induced by flash lamp annealing / Ohdaira, Keisuke, Thin Solid Films, 575, pp.21-24, 2015-01-30, Elsevier
37 Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C / Matsumura, Hideki, Hayakawa, Taro, Ohta, Tatsunori, Nakashima, Yuki, Miyamoto, Motoharu, Trinh, Cham Thi, Koyama, Koichi, Ohdaira, Keisuke, Journal of Applied Physics, 116(11), pp.114502-1-114502-10, 2014-09-16, American Institute of Physics
38 Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiN_x films by introducing phosphorous catalytic-doped layer / Trinh, Cham Thi, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Journal of Applied Physics, 116(4), pp.044510-1-044510-7, 2014-07-28, American Institute of Physics
39 短時間結晶化を利用した次世代多結晶シリコン薄膜太陽電池作製技術の開発 / 大平, 圭介, 科学研究費助成事業研究成果報告書, pp.1-4, 2014-06-03
40 Effects of catalyst-generated atomic hydrogen treatment on amorphous silicon fabricated by Liquid-Si printing / Murayama, Hiroko, Ohyama, Tatsushi, Terakawa, Akira, Takagishi, Hideyuki, Masuda, Takashi, Ohdaira, Keisuke, Shimoda, Tatsuya, Japanese Journal of Applied Physics, 53(5S1), pp.05FM06-1-05FM06-4, 2014-04-22, IOP Publishing
41 Deposition of moisture barrier films by catalytic CVD using hexamethyldisilazane / Ohdaira, Keisuke, Matsumura, Hideki, Japanese Journal of Applied Physics, 53(5S1), pp.05FM03-1-05FM03-4, 2014-04-02, IOP Publishing
42 A Method to Evaluate Explosive Crystallization Velocity of Amorphous Silicon Films during Flash Lamp Annealing / Ohdaira, Keisuke, Canadian Journal of Physics, 92(7/8), pp.718-722, 2014-02-25, NRC Research Press
43 Effect of Annealing and Hydrogen Radical Treatment on the Structure of Solution-Processed Hydrogenated Amorphous Silicon Films / Sakuma, Yoo, Ohdaira, Keisuke, Masuda, Takashi, Takagishi, Hideyuki, Shen, Zhongrong, Shimoda, Tatsuya, Japanese Journal of Applied Physics, 53(4S), pp.04ER07-1-04ER07-5, 2014-02-14, IOP Publishing
44 Passivation quality of a stoichiometric SiN_x single passivation layer on crystalline silicon prepared by catalytic chemical vapor deposition and successive annealing / Thi, Trinh Cham, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Japanese Journal of Applied Physics, 53(2), pp.022301-1-022301-6, 2014-01-22, IOP Publishing
45 Formation of vertical concentration gradients in poly(3-hexylthiophene-2,5-diyl): Phenyl-C_<61>-butyric acid methyl ester-graded bilayer solar cells / Vohra, Varun, Higashimine, Koichi, Tsuzaki, Shogo, Ohdaira, Keisuke, Murata, Hideyuki, Thin Solid Films, 554, pp.41-45, 2013-06-18, Elsevier
46 Defect Termination of Flash-Lamp-Crystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing / Ohdaira, Keisuke, Japanese Journal of Applied Physics, 52(4), pp.04CR11-1-04CR11-4, 2013-04-22, The Japan Society of Applied Physics
47 Flash-lamp-induced explosive crystallization of amorphous germanium films leaving behind periodic microstructures / Ohdaira, Keisuke, Matsumura, Hideki, Thin Solid Films, 524, pp.161-165, 2012-10-23, Elsevier
48 Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization / Ohdaira, Keisuke, Sawada, Keisuke, Usami, Noritaka, Varlamov, Sergey, Matsumura, Hideki, Japanese Journal of Applied Physics, 51(10), pp.10NB15-1-10NB15-4, 2012-10-22, The Japan Society of Applied Physics
49 Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers / Higashimine, Koichi, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Otsuka, N., Journal of Vacuum Science & Technology B, 30(3), pp.31208-1-31208-6, 2012-04-26, American Vacuum Society
50 Passivation characteristics of SiNx/a-Si and SiNx/Si-rich-SiNx stacked layers on crystalline silicon / Thi, Trinh Cham, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Solar Energy Materials and Solar Cells, 100, pp.169-173, 2012-02-06, Elsevier

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