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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15509

Title: High-performance oxide thin film transistor fully fabricated by a direct rheology imprinting
Authors: Phan, Tue Trong
Fukada, Kazuhiro
Shimoda, Tatsuya
Keywords: oxide thin film transistor
nano-rheology printing
printed electronics
solution process
Issue Date: 2017-11-30
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 111
Number: 22
Start page: 223504-1
End page: 223504-5
DOI: 10.1063/1.4998816
Abstract: Operation of all oxide thin-film transistors fully fabricated by a direct rheology-imprinting technique was demonstrated. In the device, a highly conductive amorphous La-Ru-O (8 × 10^<−3> Ω cm) was used as the gate and source/drain electrodes. Indium oxide and amorphous La-Zr-O were utilized as the semiconducting channel and gate insulator, respectively. Silsesquioxane-based SiO_2 was used both as a mask and as a passivation layer for the channel. The obtained “on/off” current ratio, field-effect mobility, threshold voltage, and subthreshold swing factor were approximately 10^7, 8.4 cm^2 V^<−1> s^<−1>, −0.18 V, and 80 mV/decade, respectively.
Rights: Copyright 2017 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Phan Trong Tue, Kazuhiro Fukada, and Tatsuya Shimoda, Applied Physics Letters, 111(22), 223504 (2017) and may be found at http://dx.doi.org/10.1063/1.4998816
URI: http://hdl.handle.net/10119/15509
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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