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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15731

Title: Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B
Authors: Islam, Md. Earul
Akabori, Masashi
Keywords: MBE
Issue Date: 2017-02-08
Publisher: Elsevier
Magazine name: Journal of Crystal Growth
Volume: 463
Start page: 86
End page: 89
DOI: 10.1016/j.jcrysgro.2017.02.009
Abstract: We carried out molecular beam epitaxial (MBE) growth of MnAs/InAs hybrid structure on GaAs(111)B for spin field effect transistor (spin-FET) applications. We observed good alignment of hexagonal MnAs and cubic InAs epitaxial layers with GaAs(111)B by X-ray diffraction (XRD) measurement. We observed smooth surface morphology of MnAs/InAs by atomic force microscopy (AFM), and also observed maze-like magnetic structure by magnetic force microscopy (MFM). We observed easy and hard magnetizations in-plane and out-of-plane directions similar to MnAs/GaAs(111)B using superconducting quantum interference device (SQUID) magnetometer. We believe that the MnAs/InAs hybrid structure on GaAs(111)B can be a base structure for spin-FETs.
Rights: Copyright (C)2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Md. Earul Islam, Masashi Akabori, Journal of Crystal Growth, 463, 2017, 86-89, http://dx.doi.org/10.1016/j.jcrysgro.2017.02.009
URI: http://hdl.handle.net/10119/15731
Material Type: author
Appears in Collections:g10-1. 雑誌掲載論文 (Journal Articles)

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