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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15736

Title: In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure
Authors: Islam, Md. Earul
Akabori, Masashi
Keywords: MnAs
InAs
GaAs(111)B
spintronics
Issue Date: 2017-03-06
Publisher: Elsevier
Magazine name: Physica B: Condensed Matter
Volume: 532
Start page: 95
End page: 98
DOI: 10.1016/j.physb.2017.03.013
Abstract: We characterized in-plane magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure grown by molecular beam epitaxy (MBE). We observed isotropic easy magnetization in two crystallographic in-plane directions, [2^^-110] and [01^^-10] of hexagonal MnAs i.e. [1^^-10] and [11^^-2] of cubic InAs. We also fabricated transmission line model (TLM) devices, and observed almost isotropic electrical properties in two crystallographic in-plane directions, [1^^-10] and [11^^-2] of cubic InAs. Also we tried to fabricate and characterize lateral spin-valve (LSV) devices from the hybrid structure. We could roughly estimate the spin injection efficiency and the spin diffusion length at room temperature in [11^^-2] direction. We believe that the hybrid structures are helpful to design spintronic device with good flexibility in-plane.
Rights: Copyright (C)2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Md. Earul Islam and M. Akabori, Physica B: Condensed Matter, 532, 2017, 95-98, http://dx.doi.org/10.1016/j.physb.2017.03.013
URI: http://hdl.handle.net/10119/15736
Material Type: author
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

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