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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16130
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| タイトル: | Effect of starting point formation on the crystallization of amorphous silicon films by flash lamp annealing |
| 著者: | Sato, Daiki
Ohdaira, Keisuke |
| 発行日: | 2018-03-01 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 57 |
| 号: | 4S |
| 開始ページ: | 04FS05-1 |
| 終了ページ: | 04FS05-5 |
| DOI: | 10.7567/JJAP.57.04FS05 |
| 抄録: | We succeed in the crystallization of hydrogenated amorphous silicon (a-Si:H) films by flash lamp annealing (FLA) at a low fluence by intentionally creating starting points for the trigger of explosive crystallization (EC). We confirm that a partly thick a-Si part can induce the crystallization of a-Si films. A periodic wavy structure is observed on the surface of poly-Si on and near the thick parts, which is a clear indication of the emergence of EC. Creating partly thick a-Si parts can thus be effective for the control of the starting point of crystallization by FLA and can realize the crystallization of a-Si with high reproducibility. We also compare the effects of creating thick parts at the center and along the edge of the substrates, and a thick part along the edge of the substrates leads to the initiation of crystallization at a lower fluence. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2018 The Japan Society of Applied Physics. Daiki Sato and Keisuke Ohdaira, Japanese Journal of Applied Physics, 57(4S), 2018, 04FS05. http://dx.doi.org/10.7567/JJAP.57.04FS05 |
| URI: | http://hdl.handle.net/10119/16130 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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| 3031.pdf | | 960Kb | Adobe PDF | 見る/開く |
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