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c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16132
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| タイトル: | Passivation effect of ultra-thin SiN_x films formed by catalytic chemical vapor deposition for crystalline silicon surface |
| 著者: | Song, Hao
Ohdaira, Keisuke |
| 発行日: | 2018-06-11 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 57 |
| 号: | 8S3 |
| 開始ページ: | 08RB03-1 |
| 終了ページ: | 08RB03-4 |
| DOI: | 10.7567/JJAP.57.08RB03 |
| 抄録: | We propose a way of replacing silicon dioxide (SiO_2) films in tunnel oxide passivated contact (TOPCon) solar cells by ultra-thin Si nitride (SiN_x) films. We deposit SiN_x films on n-type crystalline Si (c-Si) wafers by catalytic chemical vapor deposition (Cat-CVD), by which we avoid a plasma damage to the surface of c-Si. Thin (<5 nm) SiN_x films can be deposited with good controllability by tuning the deposition conditions. To improve the passivation quality of SiN_x films, hydrogen treatment was performed onto the SiN_x-coated c-Si surfaces. Their effective minority carrier lifetime (τ_<eff>) can be improved up to >1 ms by the hydrogen treatment for the samples containing SiN_x with a proper refractive indices and >10-nm-thick n-type amorphous Si (n-a-Si). The ultra-thin SiN_x films have sufficiently high passivation ability and have the required level for the passivation layers of rear-side contact in the TOPCon-like c-Si solar cells. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2018 The Japan Society of Applied Physics. Hao Song and Keisuke Ohdaira, Japanese Journal of Applied Physics, 57(8S3), 2018, 08RB03. http://dx.doi.org/10.7567/JJAP.57.08RB03 |
| URI: | http://hdl.handle.net/10119/16132 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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記述 |
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| 3037.pdf | | 197Kb | Adobe PDF | 見る/開く |
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