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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16133
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| タイトル: | Effect of antireflection coating on the crystallization of amorphous silicon films by flash lamp annealing |
| 著者: | Sonoda, Yuki
Ohdaira, Keisuke |
| 発行日: | 2017-03-17 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 56 |
| 号: | 4S |
| 開始ページ: | 04CS10-1 |
| 終了ページ: | 04CS10-4 |
| DOI: | 10.7567/JJAP.56.04CS10 |
| 抄録: | We succeed in decreasing the fluence of a flash lamp pulse required for the crystallization of electron-beam (EB)-evaporated amorphous silicon (a-Si) films using silicon nitride (SiN_x) antireflection films. The antireflection effect of SiN_x is confirmed not only when SiN_x is placed on the surface of a-Si or flash lamp annealing (FLA) is performed from the film side, but also when SiN_x is inserted between glass and a-Si and a flash pulse is supplied from the glass side. We also quantitatively confirm, by calculating flash lamp pulse energies actually reaching a-Si films using reflectance spectra, that the reduction in the fluence of a flash lamp pulse for the crystallization of a-Si films is due to the antireflection effect of SiN_x. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2017 The Japan Society of Applied Physics. Yuki Sonoda and Keisuke Ohdaira, Japanese Journal of Applied Physics, 56(4S), 2017, 04CS10. http://dx.doi.org/10.7567/JJAP.56.04CS10 |
| URI: | http://hdl.handle.net/10119/16133 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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| 3028.pdf | | 495Kb | Adobe PDF | 見る/開く |
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