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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16138
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| タイトル: | Catalytic phosphorus and boron doping of amorphous silicon films for application to silicon heterojunction solar cells |
| 著者: | Ohdaira, Keisuke
Seto, Junichi
Matsumura, Hideki |
| 発行日: | 2017-07-04 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 56 |
| 号: | 8S2 |
| 開始ページ: | 08MB06-1 |
| 終了ページ: | 08MB06-5 |
| DOI: | 10.7567/JJAP.56.08MB06 |
| 抄録: | We investigate a novel doping method, catalytic impurity doping (Cat-doping), for application to the fabrication of silicon heterojunction (SHJ) solar cells. Thin p-type or n-type doped layers can be formed on intrinsic amorphous Si (a-Si) films by exposing P- or B-related radicals generated by the catalytic cracking of phosphine (PH_3) or diborane (B_2H_6) gas molecules. The passivation quality of underlying a-Si films can be maintained both for phosphorus (P) and boron (B) Cat-doping if we carefully choose the appropriate substrate temperature during Cat-doping. We confirm the rectifying and photovoltaic properties of an SHJ solar cell containing a B Cat-doped layer as a p-type a-Si emitter. These findings suggest the applicability of Cat-doping to SHJ solar cells. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2017 The Japan Society of Applied Physics. Keisuke Ohdaira, Junichi Seto and Hideki Matsumura, Japanese Journal of Applied Physics, 56(8S2), 2017, 08MB06. http://dx.doi.org/10.7567/JJAP.56.08MB06 |
| URI: | http://hdl.handle.net/10119/16138 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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記述 |
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| 3039.pdf | | 1095Kb | Adobe PDF | 見る/開く |
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