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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/16141

タイトル: Indium tin oxide sputtering damage to catalytic chemical vapor deposited amorphous silicon passivation films and its recovery
著者: Konishi, Takeo
Ohdaira, Keisuke
キーワード: Passivation
Sputtering
Cat-CVD
ITO
Silicon heterojunction solar cells
発行日: 2017-01-12
出版者: Elsevier
誌名: Thin Solid Films
巻: 635
開始ページ: 73
終了ページ: 77
DOI: 10.1016/j.tsf.2017.01.021
抄録: We investigated the influence of indium tin oxide (ITO) sputtering damage to various types of amorphous silicon (a-Si) passivation films deposited by catalytic chemical vapor deposition. Intrinsic (i-) a-Si, n-type (n-) a-Si/i-a-Si, and p-type (p-) a-Si/i-a-Si stacked films were prepared on crystalline Si, and ITO was sputtered at various temperatures and RF powers, followed by post-annealing at 200 °C. Effective minority carrier lifetime (τ_<eff>) of almost all the samples decreases drastically after sputtering, while τ_<eff> of the samples with ITO sputtered at room temperature recovers significantly by post-annealing. Annealing before sputtering and sputtering at lower RF power leads to more effective recovery of τ_<eff>. The samples with ITO sputtered to an n-a-Si/i-a-Si stack show large τ_<eff> recovery, while the samples with ITO sputtered to a p-a-Si/i-a-Si stack show much smaller τ_<eff> recovery. Τeff recovery after ITO sputtering thus depends on the types of a-Si passivation films, which may be related to the modification of band alignment by the existence of ITO.
Rights: Copyright (C)2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Takeo Konishi and Keisuke Ohdaira, Thin Solid Films, 635, 2017, 73-77, http://dx.doi.org/10.1016/j.tsf.2017.01.021
URI: http://hdl.handle.net/10119/16141
資料タイプ: author
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

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