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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16143
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| タイトル: | Catalytic doping of phosphorus and boron atoms on hydrogenated amorphous silicon films |
| 著者: | Seto, Junichi
Ohdaira, Keisuke
Matsumura, Hideki |
| 発行日: | 2016-03-03 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 55 |
| 号: | 4S |
| 開始ページ: | 04ES05-1 |
| 終了ページ: | 04ES05-4 |
| DOI: | 10.7567/JJAP.55.04ES05 |
| 抄録: | We investigate the low temperature doping of phosphorus (P) and boron (B) atoms ontohydrogenated amorphous silicon (a-Si:H) films by catalytic doping (Cat-doping). The conductivity of a-Si:H films increases as catalyzer temperature (T_<cat>) increases, and the increase in the conductivity is accompanied by significant reduction in the activation energy obtained from the Arrhenius plot of the conductivity. Secondary ion mass spectrometry (SIMS) measurement reveals that Cat-doped P and B atoms exist within ~10-15 nm from the surface of a-Si:H films, indicating that the shallow doping of P and B atoms is realized onto a-Si:H films like the case of Cat-doping onto crystalline Si (c-Si) wafers. We also confirm no additional film deposition during Cat-doping. These results suggest that decomposed species are effectively doped onto a-Si:H films similar to the case of Cat-doping onto c-Si. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2016 The Japan Society of Applied Physics. Junichi Seto, Keisuke Ohdaira, and Hideki Matsumura, Japanese Journal of Applied Physics, 55(4S), 2016, 04ES05. http://dx.doi.org/10.7567/JJAP.55.04ES05 |
| URI: | http://hdl.handle.net/10119/16143 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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| 3034.pdf | | 191Kb | Adobe PDF | 見る/開く |
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