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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16145
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| タイトル: | Suppression of the epitaxial growth of Si films in Si heterojunction solar cells by the formation of ultra-thin oxide layers |
| 著者: | Ohdaira, Keisuke
Oikawa, Takafumi
Higashimine, Koichi
Matsumura, Hideki |
| 発行日: | 2016-06-03 |
| 出版者: | Elsevier |
| 誌名: | Current Applied Physics |
| 巻: | 16 |
| 号: | 9 |
| 開始ページ: | 1026 |
| 終了ページ: | 1029 |
| DOI: | 10.1016/j.cap.2016.06.001 |
| 抄録: | The epitaxial growth of silicon (Si) films during the catalytic chemical vapor deposition (Cat-CVD) of intrinsic amorphous Si (i-a-Si) passivation films on crystalline Si (c-Si) wafers is suppressed by the oxidation of c-Si surfaces simply by dipping the c-Si wafers in hydrogen peroxide (H_2O_2). This oxidation treatment is also effective for (111)-oriented c-Si surfaces particularly at high a-Si deposition temperatures. The suppression of the epitaxial growth leads to the better effective minority carrier lifetime (τ_<eff>) of c-Si wafers passivated with Cat-CVD i-a-Si films. SHJ solar cells show remarkably high open-circuit voltage (V_<oc>) exceeding 0.7 V. These results clearly show the effectiveness of the insertion of SiO_x layers on the improvement in Cat-CVD a-Si/c-Si interfaces. |
| Rights: | Copyright (C)2016, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Keisuke Ohdaira, Takafumi Oikawa, Koichi Higashimine, and Hideki Matsumura, Current Applied Physics, 16(9), 2016, 1026-1029, http://dx.doi.org/10.1016/j.cap.2016.06.001 |
| URI: | http://hdl.handle.net/10119/16145 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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