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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16165
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| タイトル: | Fabrication of silicon heterojunction solar cells with a boron-doped a-Si:H layer formed by catalytic impurity doping |
| 著者: | Akiyama, Katsuya
Ohdaira, Keisuke |
| 発行日: | 2019-11-15 |
| 出版者: | American Institute of Physics |
| 誌名: | AIP Advances |
| 巻: | 9 |
| 号: | 11 |
| 開始ページ: | 115013-1 |
| 終了ページ: | 115013-6 |
| DOI: | 10.1063/1.5123769 |
| 抄録: | We investigate the effect of boron (B) catalytic impurity doping (Cat-doping), a low-temperature doping method by exposing to catalytically generated dopant radicals, on hydrogenated amorphous silicon (a-Si:H) films and the influence of the electrical properties of indium tin oxide (ITO) films on the tunneling conduction of carriers through the ITO/a-Si:H interfaces. The usage of ITO films with higher carrier density and B Cat-doped a-Si:H films formed with the addition of H_2 enhances carrier tunneling through the a-Si:H/ITO interfaces. We also evaluate the current density–voltage (J–V) characteristics of Si heterojunction (SHJ) solar cells with a B Cat-doped a-Si:H layer as an emitter layer. In the case of B Cat-doping with the addition of H_2, we obtain a SHJ solar cell which shows a conversion efficiency (η) of 12.6% and an open-circuit voltage (V_<oc>) of 617 mV. The postannealing of the SHJ cells is effective to improve their V_<oc> and η. These results will lead to the application of B Cat-doping on heterojunction back-contact solar cells in the future. |
| Rights: | Katsuya Akiyama and Keisuke Ohdaira, AIP Advances, 9(11), 2019, 115013. © 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/1.5123769 |
| URI: | http://hdl.handle.net/10119/16165 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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