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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16205
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| タイトル: | Comprehensive study of potential‐induced degradation in silicon heterojunction photovoltaic cell modules |
| 著者: | Yamaguchi, Seira
Yamamoto, Chizuko
Ohdaira, Keisuke
Masuda, Atsushi |
| キーワード: | Potential-induced degradation
Photovoltaic module
Silicon heterojunction solar cell
Reliability
Acceleration test
Ionomer |
| 発行日: | 2018-04-16 |
| 出版者: | John Wiley & Sons, Ltd |
| 誌名: | Progress in Photovoltaics |
| 巻: | 26 |
| 号: | 9 |
| 開始ページ: | 697 |
| 終了ページ: | 708 |
| DOI: | 10.1002/pip.3006 |
| 抄録: | Accelerated tests were used to study potential-induced degradation (PID) in photovoltaic (PV) modules fabricated from silicon heterojunction (SHJ) solar cells containing tungsten-doped indium oxide (IWO) transparent conductive films on both sides of the cells and a rear-side emitter. A negative bias of −1000 V was applied to a module with respect to the cover glass surface in a chamber maintained at 85 °C, which significantly reduced the cell’s short-circuit current density (J_<sc>) within several days. Based on dark current density–voltage and external quantum efficiency measurements, the reduction in the J_<sc> was attributed to optical losses rather than carrier recombination. X-ray absorption fine structure spectroscopy showed the formation of metallic indium (In) in the IWO layers of a degraded cell, which suggests that the root cause of the optical loss was a darkening of the front IWO layers caused by the precipitation of metallic In. In extremely severe PID tests, the SHJ PV modules exhibited not only a further reduction in the J_<sc> but also a moderate reduction in the open-circuit voltage (V_<oc>). These J_<sc> and V_<oc> reductions were probably caused by sodium being introduced into the base region of the cells. A comparison of the PID test results of the SHJ PV modules with those of other types of PV modules indicates that SHJ PV modules have a relatively high resistance to PID. As a module with an ionomer encapsulant exhibited little degradation, their high resistances to PID may be further improved by using encapsulants with high electrical resistances. |
| Rights: | Copyright (C) 2018 John Wiley & Sons, Ltd. This is the pre-peer reviewed version of the following article: Seira Yamaguchi, Chizuko Yamamoto, Keisuke Ohdaira, Atsushi Masuda, Progress in Photovoltaics, 26(9), 2018, pp.697-708, which has been published in final form at http://dx.doi.org/10.1002/pip.3006. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. |
| URI: | http://hdl.handle.net/10119/16205 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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記述 |
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