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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/16205

Title: Comprehensive study of potential‐induced degradation in silicon heterojunction photovoltaic cell modules
Authors: Yamaguchi, Seira
Yamamoto, Chizuko
Ohdaira, Keisuke
Masuda, Atsushi
Keywords: Potential-induced degradation
Photovoltaic module
Silicon heterojunction solar cell
Reliability
Acceleration test
Ionomer
Issue Date: 2018-04-16
Publisher: John Wiley & Sons, Ltd
Magazine name: Progress in Photovoltaics
Volume: 26
Number: 9
Start page: 697
End page: 708
DOI: 10.1002/pip.3006
Abstract: Accelerated tests were used to study potential-induced degradation (PID) in photovoltaic (PV) modules fabricated from silicon heterojunction (SHJ) solar cells containing tungsten-doped indium oxide (IWO) transparent conductive films on both sides of the cells and a rear-side emitter. A negative bias of −1000 V was applied to a module with respect to the cover glass surface in a chamber maintained at 85 °C, which significantly reduced the cell’s short-circuit current density (J_<sc>) within several days. Based on dark current density–voltage and external quantum efficiency measurements, the reduction in the J_<sc> was attributed to optical losses rather than carrier recombination. X-ray absorption fine structure spectroscopy showed the formation of metallic indium (In) in the IWO layers of a degraded cell, which suggests that the root cause of the optical loss was a darkening of the front IWO layers caused by the precipitation of metallic In. In extremely severe PID tests, the SHJ PV modules exhibited not only a further reduction in the J_<sc> but also a moderate reduction in the open-circuit voltage (V_<oc>). These J_<sc> and V_<oc> reductions were probably caused by sodium being introduced into the base region of the cells. A comparison of the PID test results of the SHJ PV modules with those of other types of PV modules indicates that SHJ PV modules have a relatively high resistance to PID. As a module with an ionomer encapsulant exhibited little degradation, their high resistances to PID may be further improved by using encapsulants with high electrical resistances.
Rights: Copyright (C) 2018 John Wiley & Sons, Ltd. This is the pre-peer reviewed version of the following article: Seira Yamaguchi, Chizuko Yamamoto, Keisuke Ohdaira, Atsushi Masuda, Progress in Photovoltaics, 26(9), 2018, pp.697-708, which has been published in final form at http://dx.doi.org/10.1002/pip.3006. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
URI: http://hdl.handle.net/10119/16205
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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