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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/16213

Title: Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy
Authors: Tran, Dat Q.
Pham, Huyen T.
Higashimine, Koichi
Oshima, Yoshifumi
Akabori, Masashi
Keywords: III-V semiconductors
GaAs nanowires
molecular beam epitaxy
vapor liquid solid
Issue Date: 2018-02-20
Publisher: Elsevier
Magazine name: Physica E: Low-dimensional Systems and Nanostructures
Volume: 99
Start page: 58
End page: 62
DOI: 10.1016/j.physe.2018.01.010
Abstract: We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs 〈111〉B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs 〈111〉;A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another alternative inclined angle of 74° were additionally observed and attributed to be 〈111〉-oriented, not in direct epitaxial relation with the substrate. Such 74° NWs’ existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around 〈111〉 directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.
Rights: Copyright (C)2018, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Dat Q. Tran, Huyen T. Pham, Koichi Higashimine, Yoshifumi Oshima, Masashi Akabori, Physica E: Low-dimensional Systems and Nanostructures, 99, 2018, 58-62, http://dx.doi.org/10.1016/j.physe.2018.01.010
URI: http://hdl.handle.net/10119/16213
Material Type: author
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

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