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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/16229

Title: Multistage performance deterioration in n-type crystalline silicon photovoltaic modules undergoing potential-induced degradation
Authors: Komatsu, Yutaka
Yamaguchi, Seira
Masuda, Atsushi
Ohdaira, Keisuke
Keywords: Potential-induced degradation
Device reliability
Performance deterioration
N-type crystalline silicon solar cell
Photovoltaic module
Issue Date: 2018-03-26
Publisher: Elsevier
Magazine name: Microelectronics Reliability
Volume: 84
Start page: 127
End page: 133
DOI: 10.1016/j.microrel.2018.03.018
Abstract: This study addresses the behavior of n-type front-emitter (FE) crystalline-silicon (c-Si) photovoltaic (PV) modules in potential-induced degradation (PID) tests with a long duration of up to 20 days. By PID tests where a negative bias of −1000 V was applied at 85 °C to 20 × 20-mm^2-sized n-type FE c-Si PV cells in modules, the short circuit current density (J_<sc>) and the open-circuit voltage (V_<oc>) started to be decreased within 10 s, and strongly saturates within approximately 120 s, resulting in a reduction in the maximum output power (P_<max>) and its saturation. After thesaturation, all the parameters were almost unchanged until after 1 h. However, the fill factor (FF) then started to decrease and saturated again. After approximately 48 h, FF further decreased again, accompanied by a reduction in V_<oc>. The first degradation is known to be due to an increase in the surface recombination of minority carriers by the accumulation of additional positive charges in the front Si nitride (SiN_x) films. The second and third degradations may be due to significant increases in recombination in the space charge region. The enhancement in recombination in the space charge region may be due to additional defect levels of sodium (Na) introduced into the space charge region in the p–n junction. We also performed recovery tests by applying a positive bias of +1000 V. The module with the first degradation completely recovered its performance losses, and the module with the second degradation was almost completely recovered. On the contrary, the modules with the third degradation could not be recovered. These findings may improve the understanding of the reliability of n-type FE c-Si PV modules in large-scale PV systems.
Rights: Copyright (C)2018 Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Yutaka Komatsu, Seira Yamaguchi, Atsushi Masuda, and Keisuke Ohdaira, Microelectronics Reliability, 84, 2018, 127-133, http://dx.doi.org/10.1016/j.microrel.2018.03.018
URI: http://hdl.handle.net/10119/16229
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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