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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/16286

Title: Influence of sodium on the potential-induced degradation for n-type crystalline silicon photovoltaic modules
Authors: Ohdaira, Keisuke
Komatsu, Yutaka
Suzuki, Tomoyasu
Yamaguchi, Seira
Masuda, Atsushi
Issue Date: 2019-05-14
Publisher: IOP Publishing
Magazine name: Applied Physics Express
Volume: 12
Number: 6
Start page: 064004-1
End page: 064004-4
DOI: 10.7567/1882-0786/ab1b1a
Abstract: We precisely investigate sodium (Na)-induced potential-induced degradation (PID) in n-type front-emitter (n-FE) crystalline silicon (c-Si) photovoltaic (PV) modules, in which open-circuit voltage (V_<oc>) and fill factor (FF) deteriorate. Secondary ion mass spectrometry (SIMS) shows Na introduction into n-FE cells by a negative-bias PID stress and a reduction in Na density by positive-bias application. Scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis reveal the formation of Na-based protrusions on the cell surface. Silicon nitride (SiN_x) disappears at the position of protrusions, which is the root cause for the serious and unrecoverable PID of n-FE c-Si PV modules.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2019 The Japan Society of Applied Physics. Keisuke Ohdaira, Yutaka Komatsu, Tomoyasu Suzuki, Seira Yamaguchi and Atsushi Masuda, Applied Physics Express, 12(6), 2019, 064004. http://dx.doi.org/10.7567/1882-0786/ab1b1a
URI: http://hdl.handle.net/10119/16286
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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