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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/16764

Title: High-quality surface passivation of crystalline silicon with chemical resistance and optical transparency by using catalytic chemical vapor deposition SiN_x layers and an ultrathin SiO_x film
Authors: Tu, Huynh Thi Cam
Koyama, Koichi
Nguyen, Cong Thanh
Ohdaira, Keisuke
Matsumura, Hideki
Issue Date: 2018-07-17
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 57
Number: 8S3
Start page: 08RB17-1
End page: 08RB17-4
DOI: 10.7567/JJAP.57.08RB17
Abstract: We have developed high-quality surface passivation films for n-type crystalline silicon (c-Si) with an effective minority carrier lifetime (τ_<eff>) of more than 6 ms or a maximum surface recombination velocity (SRV_<max>) of less than 2 cm/s using two highly optically transparent silicon nitride (SiN_x) layers and an ultrathin SiO_x film. First, an ultrathin SiO_x film is unintentionally formed on the surface of c-Si by annealing c-Si in N_2 ambient at 350 °C. Then, on the SiO_x film, two SiN_x layers are sequentially formed at substrate temperatures (T_<sub>) of 100 and 250 °C by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD. With the combination of the ultrathin SiO_x film and the two SiN_x layers, we can obtain a novel passivation structure with high-quality surface passivation, high optical transparency, and high chemical resistance for subsequent processes.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2018 The Japan Society of Applied Physics. Huynh Thi Cam Tu, Koichi Koyama, Cong Thanh Nguyen, Keisuke Ohdaira, and Hideki Matsumura, Japanese Journal of Applied Physics, 57(8S3), 2018, 08RB17. https://doi.org/10.7567/JJAP.57.08RB17
URI: http://hdl.handle.net/10119/16764
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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