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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16959
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| タイトル: | Influence of backsheet materials on potential-induced degradation in n-type crystalline-silicon photovoltaic cell modules |
| 著者: | Yamaguchi, Seira
Yamamoto, Chizuko
Masuda, Atsushi
Ohdaira, Keisuke |
| 発行日: | 2019-11-06 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 58 |
| 号: | 12 |
| 開始ページ: | 120901-1 |
| 終了ページ: | 120901-3 |
| DOI: | 10.7567/1347-4065/ab4fd2 |
| 抄録: | We investigated the influence of backsheet materials on potential-induced degradation (PID) in n-type crystalline-silicon (c-Si) photovoltaic (PV) cell modules. Silicon heterojunction PV cell modules and rear-emitter n-type c-Si PV cell modules were fabricated by using aluminum backsheets composed of poly ethylene terephthalate (PET)/aluminum/PET as well as typical backsheets. PID tests of the modules were performed by applying a negative bias in a dry environment (<2% relative humidity). Regardless of the types of cells, the modules with the aluminum backsheets showed smaller degradation. This indicates that aluminum backsheets reduce PID effects, and to alter backsheets may be a potential measure to reduce PID. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2019 The Japan Society of Applied Physics. Seira Yamaguchi, Chizuko Yamamoto, Atsushi Masuda, and Keisuke Ohdaira, Japanese Journal of Applied Physics, 58(12), 2019, 120901. http://dx.doi.org/10.7567/1347-4065/ab4fd2 |
| URI: | http://hdl.handle.net/10119/16959 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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記述 |
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| 3043.pdf | | 316Kb | Adobe PDF | 見る/開く |
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