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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/16959

Title: Influence of backsheet materials on potential-induced degradation in n-type crystalline-silicon photovoltaic cell modules
Authors: Yamaguchi, Seira
Yamamoto, Chizuko
Masuda, Atsushi
Ohdaira, Keisuke
Issue Date: 2019-11-06
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 58
Number: 12
Start page: 120901-1
End page: 120901-3
DOI: 10.7567/1347-4065/ab4fd2
Abstract: We investigated the influence of backsheet materials on potential-induced degradation (PID) in n-type crystalline-silicon (c-Si) photovoltaic (PV) cell modules. Silicon heterojunction PV cell modules and rear-emitter n-type c-Si PV cell modules were fabricated by using aluminum backsheets composed of poly ethylene terephthalate (PET)/aluminum/PET as well as typical backsheets. PID tests of the modules were performed by applying a negative bias in a dry environment (<2% relative humidity). Regardless of the types of cells, the modules with the aluminum backsheets showed smaller degradation. This indicates that aluminum backsheets reduce PID effects, and to alter backsheets may be a potential measure to reduce PID.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2019 The Japan Society of Applied Physics. Seira Yamaguchi, Chizuko Yamamoto, Atsushi Masuda, and Keisuke Ohdaira, Japanese Journal of Applied Physics, 58(12), 2019, 120901. http://dx.doi.org/10.7567/1347-4065/ab4fd2
URI: http://hdl.handle.net/10119/16959
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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