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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/16969

Title: Effect of a SiO_2 film on the potential-induced degradation of n-type front-emitter crystalline Si photovoltaic modules
Authors: Suzuki, Tomoyasu
Yamaguchi, Seira
Nakamura, Kyotaro
Masuda, Atsushi
Ohdaira, Keisuke
Issue Date: 2019-11-29
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 59
Number: SC
Start page: SCCD02-1
End page: SCCD02-5
DOI: 10.7567/1347-4065/ab4cf9
Abstract: We investigated the effect of silicon dioxide (SiO_2) film in n-type front-emitter (n-FE) crystalline Si (c-Si) solar cells on the potential-induced degradation (PID) of n-FE photovoltaic (PV) modules. After PID tests by applying a bias of −1000 V at 85 °C for a few min, the modules with the cells without SiO_2 did not degrade in the short-circuit current density (J_<sc>) and the open-circuit voltage (V_<oc>). Since the degradation is known to be due to positive charge accumulation in SiN_x films, the result suggests that such SiO_2 acts as barriers to retain accumulated positive charges. After further PID tests, modules without SiO_2 show faster and more significant degradation by a decreases in the fill factor (FF) and the V_<oc>. It has been proposed that the degradation in the FF and V_<oc> is caused by sodium (Na) introduction into cells. The results therefore suggest that SiO_2 delays Na migration.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2019 The Japan Society of Applied Physics. Tomoyasu Suzuki, Seira Yamaguchi, Kyotaro Nakamura, Atsushi Masuda, Keisuke Ohdaira, Japanese Journal of Applied Physics, 59(SC), 2019, SCCD02. http://dx.doi.org/10.7567/1347-4065/ab4cf9
URI: http://hdl.handle.net/10119/16969
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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