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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16970
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| タイトル: | Thickness dependence of the passivation quality of Cat-CVD SiN_x films |
| 著者: | Yuli, Wen
Ohdaira, Keisuke |
| 発行日: | 2019-12-04 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 59 |
| 号: | SC |
| 開始ページ: | SCCB07-1 |
| 終了ページ: | SCCB07-4 |
| DOI: | 10.7567/1347-4065/ab4aa3 |
| 抄録: | We investigate the thickness dependence of the passivation quality of silicon nitride (SiN_x) films formed by catalytic chemical vapor deposition (Cat-CVD). The passivation quality of SiN_x films, evaluated by measuring effective minority carrier lifetime (τ_<eff>), can be enhanced by post annealing, and show a significant thickness dependence. τ_<eff> increases with SiN_x thickness up to 90 nm and shows no more significant improvement with further increase in SiN_x thickness. Interface state density (D_<it>) shows high consistency with thickness dependence of τ_<eff> before and after annealing, whereas fixed charge density (Q_f) rather decreases with increase in SiN_x thickness. We propose a possible mechanism that SiN_x films may release hydrogen (H) atoms during post annealing to terminate dangling bonds on the c-Si surface which leads to decrease in D_<it>. Increase of τ_<eff> with SiN_x thickness before annealing might be caused by the annealing effect from a heated catalyzing wire. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2019 The Japan Society of Applied Physics. Wen Yuli, Keisuke Ohdaira, Japanese Journal of Applied Physics, 59(SC), 2019, SCCB07-1-SCCB07-4. http://dx.doi.org/10.7567/1347-4065/ab4aa3 |
| URI: | http://hdl.handle.net/10119/16970 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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