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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/17051

Title: Improvement in the passivation quality of catalytic-chemical-vapor-deposited silicon nitride films on crystalline Si at room temperature
Authors: Miyaura, Jun'ichiro
Ohdaira, Keisuke
Keywords: Silicon nitride
Catalytic chemical vapor deposition
Crystalline silicon
Solar cell
Issue Date: 2019-02-07
Publisher: Elsevier
Magazine name: Thin Solid Films
Volume: 674
Start page: 103
End page: 106
DOI: 10.1016/j.tsf.2019.02.006
Abstract: We observe an improvement in the passivation quality of silicon nitride (SiN_x) films formed on crystalline silicon wafers by catalytic chemical vapor deposition (Cat-CVD) under the storage at room temperature. Fluorescent light illumination enhances the improvement in the passivation quality of Cat-CVD SiN_x films, although the passivation quality is also improved in the dark. We do not see any change of bonding configurations in the SiN_x films by the storage at room temperature. Capacitance–voltage measurement reveals that an increase in positive charge density in the SiN_x films improves their passivation quality. The improvement in the passivation quality of SiN_x films is observed for SiN_x films deposited at various substrate temperatures, and SiN_x films deposited at higher temperature tends to show more significant improvement in the passivation quality.
Rights: Copyright (C)2019, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Jun'ichiro Miyaura, and Keisuke Ohdaira, Thin Solid Films, 674, 2019, 103-106, http://dx.doi.org/10.1016/j.tsf.2019.02.006
URI: http://hdl.handle.net/10119/17051
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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