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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/18012

タイトル: Influence of hygrothermal stress on potential-induced degradation for homojunction and heterojunction crystalline Si photovoltaic modules
著者: Masuda, Atsushi
Yamamoto, Chizuko
Hara, Yukiko
Jonai, Sachiko
Tachibana, Yasushi
Toyoda, Takeshi
Minamikawa, Toshiharu
Yamaguchi, Seira
Ohdaira, Keisuke
発行日: 2020-06-26
出版者: IOP Publishing
誌名: Japanese Journal of Applied Physics
巻: 59
号: 7
開始ページ: 076503-1
終了ページ: 076503-8
DOI: 10.35848/1347-4065/ab9a8a
抄録: Influences of both high-voltage stress and hygrothermal stress were studied for homojunction and heterojunction crystalline Si photovoltaic (PV) modules. In order to separately access the influence of these stresses, these PV modules were subjected to the sequential test with hygrothermal stress and high-voltage stress for various stress durations of each test. It was found that for p-type homojunction crystalline Si PV modules hygrothermal stress applied in advance much enhances potential-induced degradation (PID) by high-voltage stress. High-voltage stress applied in advance also accelerates finger-electrode degradation by hygrothermal stress. It was also clarified that hygrothermal stress for short duration applied in advance much enhances PID by high-voltage stress for n-type heterojunction crystalline Si PV modules. Possible mechanism for these accelerated degradation phenomena by combined stresses will be presented.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2020 The Japan Society of Applied Physics. Atsushi Masuda, Chizuko Yamamoto, Yukiko Hara, Sachiko Jonai, Yasushi Tachibana, Takeshi Toyoda, Toshiharu Minamikawa, Seira Yamaguchi, Keisuke Ohdaira, Japanese Journal of Applied Physics, 59(7), 2020, 076503-1-076503-8. https://doi.org/10.35848/1347-4065/ab9a8a
URI: http://hdl.handle.net/10119/18012
資料タイプ: author
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

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