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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/18016
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| タイトル: | Effect of a silicon nitride film on the potential-induced degradation of n-type front-emitter crystalline silicon photovoltaic modules |
| 著者: | Suzuki, Tomoyasu
Masuda, Atsushi
Ohdaira, Keisuke |
| 発行日: | 2020-08-28 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 59 |
| 号: | 10 |
| 開始ページ: | 104002-1 |
| 終了ページ: | 104002-5 |
| DOI: | 10.35848/1347-4065/abb39e |
| 抄録: | We investigate the effect of silicon nitride (SiN_x) films in n-type front-emitter (n-FE) crystalline Si (c-Si) solar cells on the potential-induced degradation (PID) of n-FE photovoltaic (PV) modules. A negative-bias PID test for a few min does not degrade the performance of PV modules with n-FE cells without SiN_x/silicon dioxide (SiO_2) stacks, unlike in the case of PV modules with cells with SiN_x/SiO_2. This is because of the absence of polarization-type PID. After a longer PID test, the PV modules with n-FE cells without SiN_x/SiO_2 show a slower decrease in fill factor (FF), originating from Na introduction into the depletion layer of a p–n junction, than the modules with cells with SiN_x/SiO_2. The mitigation of PID by eliminating SiN_x is partly consistent with the results of PV modules with p-type conventional cells without SiN_x in which no PID occurs. SiN_x thus has a function of enhancing Na introduction into c-Si. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2020 The Japan Society of Applied Physics. Tomoyasu Suzuki, Atsushi Masuda, Keisuke Ohdaira, Japanese Journal of Applied Physics, 59(10), 2020, 104002. https://doi.org/10.35848/1347-4065/abb39e |
| URI: | http://hdl.handle.net/10119/18016 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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