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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/18073
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| タイトル: | Passivation of textured crystalline silicon with small pyramids by silicon nitride films formed by catalytic chemical vapor deposition and phosphorus catalytic impurity doping |
| 著者: | Liu, Jing
Hamada, Keitaro
Akagi, Seimei
Ooyagi, Noboru
Yamamoto, Yuzo
Ohdaira, Keisuke |
| キーワード: | silicon nitride
catalytic chemical vapor deposition
catalytic impurity doping
backcontact crystalline silicon solar cell
texture |
| 発行日: | 2020-09-14 |
| 出版者: | Elsevier |
| 誌名: | Surfaces and Interfaces |
| 巻: | 21 |
| 開始ページ: | 100690 |
| DOI: | 10.1016/j.surfin.2020.100690 |
| 抄録: | Silicon nitride (SiN_x) films formed by catalytic chemical vapor deposition (Cat-CVD) and phosphorus (P) catalytic impurity doping (Cat-doping) are applied on textured crystalline silicon (c-Si) wafers with a pyramid size of 1–2 μm to reduce the surface recombination of minority carriers. SiN_x single layer passivation realizes a surface recombination velocity (SRV) of less than 10 cm/s. The addition of a P Cat-doped layer results in a reduction in a SRV to ～7 cm/s owing to field-effect passivation. These values are comparable to those obtained in our previous study for textured c-Si surface with larger-sized pyramids, indicating the high passivation ability of Cat-CVD SiN_x films and P Cat-doping independent of the size of pyramids. In addition to the double-side textured wafers, we also prepare a single-side textured wafer using Cat-CVD SiN_x as an etching barrier. We find that Cat-CVD SiN_x films can be utilized as an etching barrier against alkali solution, and a high effective minority carrier lifetime (τ_<eff>) of 2.3 ms has been obtained by the passivation with Cat-CVD SiN_x films. These achievements will contribute to an improvement in the performance of back-contact c-Si solar cells. |
| Rights: | Copyright (C)2020, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Jing Liu, Keitaro Hamada, Seimei Akagi, Noboru Ooyagi, Yuzo Yamamoto, and Keisuke Ohdaira, Surfaces and Interfaces, 21, 2020, 100690, https://doi.org/10.1016/j.surfin.2020.100690 |
| URI: | http://hdl.handle.net/10119/18073 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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