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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/18173
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| タイトル: | Influence of light irradiation on the charge-accumulation-type potential-induced degradation of n-type front-emitter crystalline Si photovoltaic modules |
| 著者: | Zhao, Rongrong
Huynh, Tu Thi Cam
Masuda, Atsushi
Ohdaira, Keisuke |
| 発行日: | 2022-01-28 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 61 |
| 号: | SB |
| 開始ページ: | SB1023-1 |
| 終了ページ: | SB1023-4 |
| DOI: | 10.35848/1347-4065/ac279f |
| 抄録: | We investigated the influence of light irradiation on the charge-accumulation-type potential-induced degradation (PID) of n-type front-emitter (n-FE) crystalline silicon (c-Si) photovoltaic (PV) modules. A PID test under one-sun irradiation leads to faster reductions of short-circuit current density (J_<sc>) and open-circuit voltage (V_<oc>) compared to the case of a PID test in the dark. This indicates that light irradiation accelerates the charge-accumulation-type PID of the n-FE PV modules. The J_<sc> and V_<oc> reductions become slower under irradiation without ultraviolet (UV) light, showing almost the same time dependence as the PID test in the dark. The acceleration of PID by the addition of UV light may be explained by the excitation of electrons at K^0 centers in silicon nitride (SiN_x) and their faster drift to the surface by electric field applied to SiN_x. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C)2022 The Japan Society of Applied Physics. Rongrong Zhao, Huynh Thi Cam Tu, Atsushi Masuda, Keisuke Ohdaira, Japanese Journal of Applied Physics, 61(SB), 2022, SB1023-1-SB1023-4. http://dx.doi.org/10.35848/1347-4065/ac279f |
| URI: | http://hdl.handle.net/10119/18173 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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