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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/18174

Title: Crystallization of catalytic CVD hydrogenated n-a-Si films on textured glass substrates by flash lamp annealing
Authors: Wang, Zheng
Huynh, Tu Thi Cam
Ohdaira, Keisuke
Issue Date: 2022-01-28
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 61
Number: SB
Start page: SB1019-1
End page: SB1019-4
DOI: 10.35848/1347-4065/ac290e
Abstract: Flash lamp annealing (FLA) is a short-duration annealing technique and can crystallize amorphous silicon (a-Si) films for thin-film polycrystalline Si (poly-Si) solar cells. We investigated the crystallization of n-type hydrogenated a-Si (n-a-Si:H) films formed by catalytic chemical vapor deposition (Cat-CVD) on Si nitride- (SiN_x-) coated textured glass substrates. The n-a-Si:H films with a thickness of ∼2.7 µm were crystallized by FLA with no film peeling even without chromium adhesion layers. We also confirmed that the crystallization takes place through explosive crystallization (EC). The addition of phosphorous to the precursor a-Si:H slightly modifies the crystallization, resulting in different grain size and EC velocity compared to the case of EC of intrinsic a-Si:H.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C)2022 The Japan Society of Applied Physics. Zheng Wang, Huynh Thi Cam Tu, Keisuke Ohdaira, Japanese Journal of Applied Physics, 61(SB), 2022, SB1019-1-SB1019-4. http://dx.doi.org/10.35848/1347-4065/ac290e
URI: http://hdl.handle.net/10119/18174
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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