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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/18177

Title: Use of n-type amorphous silicon films as an electron transport layer in the perovskite solar cells
Authors: Song, Zhancheng
Sumai, Yuuka
HUYNH, Tu Thi Cam
Md. Shahiduzzaman
Taima, Tetsuya
Ohdaira, Keisuke
Issue Date: 2022-01-25
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 61
Number: SB
Start page: SB1012-1
End page: SB1012-4
DOI: 10.35848/1347-4065/ac2c99
Abstract: We have investigated the use of n-type amorphous silicon (n-a-Si) films as the electron transport layers (ETL) in perovskite (PVK) solar cells, aiming at the application to PVK/Si tandem solar cells. The use of n-a-Si as the ETL in MAPbI_3 PVK solar cells was attempted, and the power conversion efficiency (PCE) of fluorine-doped tin oxide- (FTO-) based solar cells was improved due to an improvement in coverage on FTO with thicker n-a-Si, but the external quantum efficiency in the short wavelength region was decreased due to parasitic absorption of n-a-Si. The use of indium tin oxide with a flat surface resulted in a PCE of 1.25% for the solar cells with 10-nm-thick n-a-Si. This work indicates that n-a-Si is a potential ETL candidate for PVK solar cells and provides strategic guidance for the future vacuum-integrated process of PVK/Si heterojunction tandem solar cells, which can be feasible for efficient mass production.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C)2022 The Japan Society of Applied Physics. Zhancheng Song, Yuuka Sumai, Huynh Thi Cam Tu, Md. Shahiduzzaman , Tetsuya Taima and Keisuke Ohdaira , Japanese Journal of Applied Physics, 61(SB), 2022, SB1012-1-SB1012-4. https://doi.org/10.35848/1347-4065/ac2c99
URI: http://hdl.handle.net/10119/18177
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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