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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/18177
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| タイトル: | Use of n-type amorphous silicon films as an electron transport layer in the perovskite solar cells |
| 著者: | Song, Zhancheng
Sumai, Yuuka
HUYNH, Tu Thi Cam
Md. Shahiduzzaman
Taima, Tetsuya
Ohdaira, Keisuke |
| 発行日: | 2022-01-25 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 61 |
| 号: | SB |
| 開始ページ: | SB1012-1 |
| 終了ページ: | SB1012-4 |
| DOI: | 10.35848/1347-4065/ac2c99 |
| 抄録: | We have investigated the use of n-type amorphous silicon (n-a-Si) films as the electron transport layers (ETL) in perovskite (PVK) solar cells, aiming at the application to PVK/Si tandem solar cells. The use of n-a-Si as the ETL in MAPbI_3 PVK solar cells was attempted, and the power conversion efficiency (PCE) of fluorine-doped tin oxide- (FTO-) based solar cells was improved due to an improvement in coverage on FTO with thicker n-a-Si, but the external quantum efficiency in the short wavelength region was decreased due to parasitic absorption of n-a-Si. The use of indium tin oxide with a flat surface resulted in a PCE of 1.25% for the solar cells with 10-nm-thick n-a-Si. This work indicates that n-a-Si is a potential ETL candidate for PVK solar cells and provides strategic guidance for the future vacuum-integrated process of PVK/Si heterojunction tandem solar cells, which can be feasible for efficient mass production. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C)2022 The Japan Society of Applied Physics. Zhancheng Song, Yuuka Sumai, Huynh Thi Cam Tu, Md. Shahiduzzaman
, Tetsuya Taima and Keisuke Ohdaira
, Japanese Journal of Applied Physics, 61(SB), 2022, SB1012-1-SB1012-4. https://doi.org/10.35848/1347-4065/ac2c99 |
| URI: | http://hdl.handle.net/10119/18177 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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