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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/18178

Title: Effect of temperature and pre-annealing on the potential-induced degradation of silicon heterojunction photovoltaic modules
Authors: Xu, Jiaming
HUYNH, Tu Thi Cam
Masuda, Atsushi
Ohdaira, Keisuke
Keywords: potential-induced degradation
photovoltaic module
silicon heterojunction solar cell
water
Issue Date: 2022-02-11
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 61
Number: SC
Start page: SC1021-1
End page: SC1021-6
DOI: 10.35848/1347-4065/ac3f6e
Abstract: We investigate the effect of temperature and pre-annealing on the potential-induced degradation (PID) of silicon heterojunction (SHJ) photovoltaic (PV) modules. SHJ PV modules show a faster decrease in short-circuit current density (Jsc) at higher temperatures during PID tests. We also observe a complex relationship between the degree of the Jsc decrease and temperature during the PID tests. Pre-annealing before the PID tests at sufficiently high temperatures leads to the complete suppression of the PID of SHJ PV modules. The decrease in Jsc is known to be due to the chemical reduction of indium (In) in transparent conductive oxide (TCO) films in SHJ cells, in which water (H_2O) in SHJ modules is involved. These indicate that H_2O may out-diffuse from the SHJ PV modules during a PID test or pre-annealing at sufficiently high temperatures, by which the chemical reduction of indium in TCO into metallic In is suppressed.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C)2022 The Japan Society of Applied Physics. Jiaming Xu, Huynh Thi Cam Tu, Atsushi Masuda and Keisuke Ohdaira, Japanese Journal of Applied Physics, 61(SC), 2022, SC1021-1-SC1021-6. https://doi.org/10.35848/1347-4065/ac3f6e
URI: http://hdl.handle.net/10119/18178
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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