JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/18873

Title: Second-stage potential-induced degradation of n-type front-emitter crystalline silicon photovoltaic modules and its recovery
Authors: Ohdaira, Keisuke
Komatsu, Yutaka
Yamaguchi, Seira
Masuda, Atsushi
Keywords: potential-induced degradation
photovoltaic module
n-type front-emitter solar cell
Issue Date: 2023-05-05
Publisher: IOP Publishing on behalf of the Japan Society of Applied Physics (JSAP)
Magazine name: Japanese Journal of Applied Physics
Volume: 62
Number: SK
Start page: 1033
DOI: 10.35848/1347-4065/accb60
Abstract: We investigate the second-stage potential-induced degradation (PID) of n-type front-emitter (n-FE) crystalline silicon (c-Si) photovoltaic (PV) modules. The PID of n-FE c-Si PV modules is known to occur in three stages under negative bias stress. The second-stage PID is characterized by a reduction in fill factor (FF), due to the invasion of sodium (Na) into the depletion region of a p+–n junction and resulting increase in recombination current. The second-stage PID shows a curious independence on a negative bias voltage for the PID stress. This may indicate that the Na inducing the FF reduction comes not from the cover glass but originally exists on and/or near the cell surface. The FF reduction is recovered quite rapidly, within a few seconds, by applying a positive bias to the degraded cell. The recovered n-FE c-Si PV modules show more rapid degradation if they receive the negative bias stress again, which can be explained by Na remaining in the p+ emitter.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (c) 2023 The Japan Society of Applied Physics. Keisuke Ohdaira, Yutaka Komatsu, Seira Yamaguchi, and Atsushi Masuda, Japanese Journal of Applied Physics, 62 (SK), 2023, 1033. https://doi.org/10.35848/1347-4065/accb60
URI: http://hdl.handle.net/10119/18873
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
K-OHDAIRA-M-0513-2.pdf565KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.


Contact : Library Information Section, Japan Advanced Institute of Science and Technology