|
JAIST Repository >
JAIST >
Theses >
Doctor of Philosophy（Materials Science） >
R06) (Jun.2024 - Mar.2025 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/19931
|
| Title: | 分子線エピタキシー(MBE)法により成長したGaAs(111)B上MnAs/InAs/MnAsダブルヘテロ構造の縦型スピンデバイス応用 |
| Authors: | MD TAUHIDUL ISLAM |
| Authors(alternative): | えむでぃ たうひだる いすらむ |
| Keywords: | Semiconductor spintronics
vertical spin valve
MnAs/InAs/MnAs double heterostructure
molecular beam epitaxy
low-temperature InAs |
| Issue Date: | Mar-2025 |
| Description: | Supervisor: 赤堀 誠志
先端科学技術研究科
博士 |
| Title(English): | Vertical spintronic device application of MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy (MBE) |
| Authors(English): | MD TAUHIDUL ISLAM |
| Language: | eng |
| URI: | http://hdl.handle.net/10119/19931 |
| Academic Degrees and number: | 甲第1536号 |
| Degree-granting date: | 2025-03-21 |
| Degree name: | 博士 (マテリアルサイエンス) |
| Degree-granting institutions: | 北陸先端科学技術大学院大学 |
| Appears in Collections: | D-MS. 2024年度(R06) (Jun.2024 - Mar.2025)
|
Files in This Item:
| File |
Description |
Size | Format |
|---|
| abstract.pdf | 要旨 | 100Kb | Adobe PDF | View/Open | | paper.pdf | 本文 | 5120Kb | Adobe PDF | View/Open | | summary.pdf | 内容の要旨及び論文審査の結果の要旨 | 156Kb | Adobe PDF | View/Open |
|
All items in DSpace are protected by copyright, with all rights reserved.
|
