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http://hdl.handle.net/10119/19950
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| タイトル: | Interface charge engineering in AlTiO/AlGaN/GaN metal–insulator–semiconductor devices |
| 著者: | Nguyen, Duong Dai
Suzuki, Toshi-kazu |
| 発行日: | 2020-03-05 |
| 出版者: | AIP Publishing |
| 誌名: | Journal of Applied Physics |
| 巻: | 127 |
| 号: | 9 |
| 開始ページ: | 094501 |
| DOI: | 10.1063/1.5141399 |
| 抄録: | Toward interface charge engineering in AlTiO/AlGaN/GaN metal-insulator-semiconductor (MIS) devices, we systematically investigated insulator-semiconductor interface fixed charges depending on the composition of the AlTiO gate insulator obtained by atomic layer deposition. By evaluating the positive interface fixed charge density from the insulator-thickness dependence of the threshold voltages of the MIS devices, we found a trend that the interface fixed charge density decreases with the decrease in the Al composition ratio, i.e., increase in the Ti composition ratio, which leads to shallow threshold voltages. This trend can be attributed to the large bonding energy of O-Ti in comparison with that of O-Al and to consequent possible suppression of interface oxygen donors. For an AlTiO gate insulator with an intermediate composition, the MIS field-effect transistors exhibit favorable device characteristics with high linearity of transconductance. These results indicate a possibility of interface charge engineering using AlTiO, in addition to energy gap engineering and dielectric constant engineering. |
| Rights: | Copyright (c) 2020 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Duong Dai Nguyen, Toshi-kazu Suzuki; Interface charge engineering in AlTiO/AlGaN/GaN metal–insulator–semiconductor devices, Journal of Applied Physics, 5 March 2020; 127 (9): 094501 and may be found at https://doi.org/10.1063/1.5141399. |
| URI: | http://hdl.handle.net/10119/19950 |
| 資料タイプ: | publisher |
| 出現コレクション: | g10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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| T-SUZUKI-N-0627-1.pdf | | 525Kb | Adobe PDF | 見る/開く |
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