|
JAIST Repository >
Center for Nano Materials and Technology >
Articles >
Journal Articles >
Please use this identifier to cite or link to this item:
https://hdl.handle.net/10119/19953
|
| Title: | Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices |
| Authors: | Uryu, Kazuya
Kiuchi, Shota
Suzuki, Toshi-kazu |
| Issue Date: | 2021-07-14 |
| Publisher: | AIP Publishing |
| Magazine name: | Applied Physics Letters |
| Volume: | 119 |
| Number: | 2 |
| Start page: | 023505 |
| DOI: | 10.1063/5.0054553 |
| Abstract: | By using multi-probe Hall devices, we characterized electrical properties of AlGaN/GaN heterostructures under Ohmic metals. The characterization makes it possible to evaluate the sheet resistance, the sheet electron concentration, and the electron mobility of AlGaN/GaN heterostructures after Ohmic contact formation, by analyzing the voltage and current distribution based on a transmission line model. As a result, we find a decrease in the sheet resistance under an Ohmic metal with a decrease in the specific Ohmic contact resistivity, attributed to significant increase in the sheet electron concentration. The high sheet electron concentration indicates a parallel conduction in the AlGaN and GaN layers, caused by a high doping concentration of the near-surface AlGaN>2x1019 cm-3, which leads to an Ohmic contact dominated by field-emission. Moreover, it is suggested that polarization doping induced by a strain in the AlGaN layer has a contribution to the high doping concentration. Multi-probe Hall devices provide a useful method to characterize electrical properties of semiconductors under Ohmic metals. |
| Rights: | Copyright (c) 2021 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Kazuya Uryu, Shota Kiuchi, Toshi-kazu Suzuki; Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices, Applied Physics Letters, 14 July 2021; 119 (2): 023505 and may be found at https://doi.org/10.1063/5.0054553. |
| URI: | https://hdl.handle.net/10119/19953 |
| Material Type: | publisher |
| Appears in Collections: | g10-1. 雑誌掲載論文 (Journal Articles)
|
Files in This Item:
| File |
Description |
Size | Format |
|---|
| T-SUZUKI-N-0627-4r.pdf | | 2124Kb | Adobe PDF | View/Open |
|
All items in DSpace are protected by copyright, with all rights reserved.
|
