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Please use this identifier to cite or link to this item: https://hdl.handle.net/10119/20614

Title: Low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas
Authors: Uryu, Kazuya
Deng, Yuchen
Nanjo, Takuma
Suzuki, Toshi-kazu
Issue Date: 2025-06-09
Publisher: AIP Publishing
Magazine name: Applied Physics Letters
Volume: 126
Number: 23
Start page: 232103
DOI: 10.1063/5.0260035
Abstract: We investigated low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas (2DEG), which have extremely high sheet resistances of ~ 1012 XΩ/□. The Ohmic contacts are formed by metal deposition and lowtemperature annealing at < 600 ℃, where a contact resistance down to ~ 0.74 Ωmm can be realized. In order to evaluate the sheet resistance ps, the sheet electron concentration ns, and the electron mobility μs of the AlGaN/GaN under the Ohmic-metals, we fabricated and characterized multi-probe Hall devices. As a result, we find ps significantly decreased down to ~ 600Ω/□, ns in the 1012 cm-2 range, and μs> 1000 cm2=V-s under the Ohmic-metals, where the relationship between ns and μs suggests that a 2DEG is formed at the AlGaN/GaN heterointerface. The specific contact resistivity weakly depends on both ns and the measurement temperature, being well explained by direct tunneling between the formed 2DEG and the Ohmic-metal. Furthermore, it is found that the sheet resistance after Ohmic-metal removal returns to the initial value of ~1012Ω/□. One possible hypothesis to explain this is that polarization doping takes place under the Ohmic-metals.
Rights: Copyright (c) 2025 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Kazuya Uryu, Yuchen Deng, Takuma Nanjo, Toshi-kazu Suzuki; Low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas, Applied Physics Letters, 9 June 2025; 126 (23): 232103 and may be found at https://doi.org/10.1063/5.0260035.
URI: https://hdl.handle.net/10119/20614
Material Type: publisher
Appears in Collections:g10-1. 雑誌掲載論文 (Journal Articles)

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