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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/3324

Title: Spin polarized transports through a narrow-gap semiconductor wire with ferromagnetic contacts formed on InAlAs step-graded buffer layers
Authors: Akabori, M
Yamada, S
Keywords: InAs
InAlAs
2DEG
Step-graded buffer
Ferromagnetic electrodes
Spin polarized transports
Issue Date: 2004-05
Publisher: Elsevier
Magazine name: Science and Technology of Advanced Materials
Volume: 5
Number: 3
Start page: 305
End page: 308
DOI: 10.1016/j.stam.2003.12.013
Abstract: We investigated the transport properties of ferromagnetic/semiconductor hybrid structures utilizing an InAs/In_<0.75>Al_<0.25>As modulation-doped heterostructures formed on a GaAs (001) substrate with In_xAl_<1-x>As step-graded buffer layers. We used NiFe as ferromagnetic electrodes for injection/detection of spin-polarized electrons, which were formed on side walls of the semiconductor mesa to contact electron channel directly. We measured magneto-transport properties of the samples with current flow between the ferromagnetic electrodes at low temperatures. Under vertical magnetic fields, magneto-resistance oscillations were clearly observed, thus the ferromagnetic electrodes worked as ohmic contacts. In addition, we successfully found spin-valve properties under parallel magnetic fields. Furthermore, we observed the enhancement of spin-valve properties by squeezing the channel width.
Rights: Elsevier, Ltd., Masashi Akabori and Syoji Yamada, Science and Technology of Advanced Materials, 5(3), 2004, 305-308. http://www.sciencedirect.com/science/journal/14686996
URI: http://hdl.handle.net/10119/3324
Material Type: author
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

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