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| Title: | Structural and electronic properties of Ce@C_<82> |
| Authors: | Shibata, K
Rikiishi, Y
Hosokawa, T
Haruyama, Y
Kubozono, Y
Kashino, S
Uruga, T
Fujiwara, A
Kitagawa, H
Takano, T
Iwasa, Y |
| Issue Date: | 2003-09 |
| Publisher: | AMERICAN PHYSICAL SOCIETY |
| Magazine name: | Physical Review B |
| Volume: | 68 |
| Number: | 9 |
| Start page: | 094104-1 |
| End page: | 094104-7 |
| DOI: | 10.1103/PhysRevB.68.094104 |
| Abstract: | X-ray diffraction patterns for a solid sample of Ce@C_<82> that contains a mixture of two isomers, I and II, can be indexed in a face-centered cubic lattice with a lattice constant of 15.88(5)Å, while x-ray diffraction patterns for Ce@C_<82> isomer I alone indicate a simple cubic lattice with a lattice constant of 15.78(1) Å. Rietveld refinement for the x-ray diffraction pattern of the latter, Ce@C_<82> isomer I, has been carried out with a space group of Pa3^- . Thin films of Ce@C_<82> were first prepared by thermal deposition under ~10^<－7> Torr. The Raman spectra for these thin films show a peak ascribable to a Ce-C_<82> cage-stretching mode at ~160 cm^<－1>, implying that the valence of Ce in this structure is ＋3. This valence of ＋3 is supported by Ce L_III-edge XANES for a thin film of Ce@C_<82> . Furthermore, the local structure around the Ce ion could be determined by Ce L_III-edge EXAFS for a thin-film. Transport properties of a thin film of Ce@C_<82> have been studied by a four-probe method, and these demonstrate a semiconducting behavior with a small gap of 0.4 eV. |
| Rights: | K. Shibata, Y. Rikiishi, T. Hosokawa, Y. Haruyama, Y. Kubozono, S. Kashino, T. Uruga, A. Fujiwara, H. Kitagawa, Takano and Y. Iwasa, Physical Review B, 68(9), 094104, 2003. "Copyright 2003 by the American Physical Society." http://prola.aps.org/abstract/PRB/v68/i9/e094104 |
| URI: | https://hdl.handle.net/10119/3365 |
| Material Type: | publisher |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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