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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/3372

Title: Intrinsic transport and contact resistance effect in C_<60> field-effecttransistors
Authors: Matsuoka, Y
Uno, K
Takahashi, N
Maeda, A
Inami, N
Shikoh, E
Yamamoto, Y
Hori, H
Fujiwara, A
Issue Date: 2006-10
Magazine name: Applied Physics Letters
Volume: 89
Number: 17
Start page: 173510-1
End page: 173510-3
DOI: 10.1063/1.2372596
Abstract: The autors report size dependence of characteristics of C_<60> field-effect transistors (FETs). The transport properties of the channel and the contact resistance between the channel and electrodes are extracted from size dependence. Contact resistances are comparable to those of channel resistances, and the gate voltage dependence of contact resistance is greater than that of channel resistance even at linear region. Results show that the Schottky barriers between the channel and the electrodes still affect device characteristics in the on state of C_<60> FETs.
Rights: Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Yukitaka Matsuoka, Koichi Uno, Nobuya Takahashi, Akira Maeda, Nobuhito Inami, Eiji Shikoh, Yoshiyuki Yamamoto, Hidenobu Hori, and Akihiko Fujiwara, Applied Physics Letters 89(17), 173510 (2006) and may be found at http://link.aip.org/link/?apl/89/173510.
URI: http://hdl.handle.net/10119/3372
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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