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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/3374

Title: Fabrication of C_<60> field-effect transistors with polyimide and Ba_<0.4>Sr_<0.6>Ti_,<0.96>O_3 gate insulators
Authors: Kubozono, Y
Nagano, T
Haruyama, Y
Kuwahara, E
Takayanagi, T
Ochi, K
Fujiwara, A
Issue Date: 2005-10
Magazine name: Applied Physics Letters
Volume: 87
Number: 14
Start page: 143506-1
End page: 143506-3
DOI: 10.1063/1.2081134
Abstract: A flexible C_<60> field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ~10^<-2> cm^2 V^<-1> s^<-1> at 300 K. Furthermore, the C_<60> FET has been fabricated with a high-dielectric Ba_<0.4>Sr_<0.6>Ti_<0.96>O_3(BST) gate insulator, showing n-channel properties; the μ value is estimated to be ~10^<-4> cm^2 V^<-1> s^<-1> at 300 K. The FET device operates at very low gate voltage, V_G, and low drain-source voltage, V_<DS>. Thus these C_<60> FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.
Rights: Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Yoshihiro Kubozono, Takayuki Nagano, Yusuke Haruyama, Eiji Kuwahara, Toshio Takayanagi, Kenji Ochi and Akihiko Fujiwara, Applied Physics Letters 87(14), 143506 (2005) and may be found at http://link.aip.org/link/?apl/87/143506.
URI: http://hdl.handle.net/10119/3374
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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