|
JAIST Repository >
g. ナノマテリアルテクノロジーセンター >
g10. 学術雑誌論文等 >
g10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4157
|
| タイトル: | High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures |
| 著者: | Ono, Hideki
Taniguchi, Satoshi
Suzuki, Toshi-kazu |
| 発行日: | 2004 |
| 出版者: | Institute of Electrical and Electronics Engineers (IEEE) |
| 誌名: | Proceedings of 16th International Conference on Indium Phosphide and Related Materials |
| 開始ページ: | 288 |
| 終了ページ: | 291 |
| DOI: | 10.1109/ICIPRM.2004.1442711 |
| 抄録: | We fabricated InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) with several indium contents. High-frequency performance of the MHEMTs was measured at high temperatures up to 473 K. By the delay time analysis, we have estimated saturation electron velocity. Temperature dependence of the saturation electron velocity for the MHEMTs with higher indium contents exhibits deviations from a theory. |
| Rights: | Copyright ⓒ 2004 IEEE. Reprinted from Proceedings of 16th International Conference on Indium Phosphide and Related Materials, 2004. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. |
| URI: | http://hdl.handle.net/10119/4157 |
| 資料タイプ: | publisher |
| 出現コレクション: | g10-1. 雑誌掲載論文 (Journal Articles)
|
このアイテムのファイル:
| ファイル |
記述 |
サイズ | 形式 |
|---|
| 142-4.pdf | | 567Kb | Adobe PDF | 見る/開く |
|
当システムに保管されているアイテムはすべて著作権により保護されています。
|
