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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4157

Title: High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures
Authors: Ono, Hideki
Taniguchi, Satoshi
Suzuki, Toshi-kazu
Issue Date: 2004
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Magazine name: Proceedings of 16th International Conference on Indium Phosphide and Related Materials
Start page: 288
End page: 291
DOI: 10.1109/ICIPRM.2004.1442711
Abstract: We fabricated InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) with several indium contents. High-frequency performance of the MHEMTs was measured at high temperatures up to 473 K. By the delay time analysis, we have estimated saturation electron velocity. Temperature dependence of the saturation electron velocity for the MHEMTs with higher indium contents exhibits deviations from a theory.
Rights: Copyright ⓒ 2004 IEEE. Reprinted from Proceedings of 16th International Conference on Indium Phosphide and Related Materials, 2004. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
URI: http://hdl.handle.net/10119/4157
Material Type: publisher
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

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