JAIST Repository >
Center for Nano Materials and Technology >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4158

Title: Degradation of metamorphic InGaAs Esaki tunnel diodes due to electrode diffusion and impurity interdiffusion
Authors: Ono, Hideki
Yanagita, Masashi
Taniguchi, Satoshi
Suzuki, Toshi-kazu
Issue Date: 2005
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Magazine name: Proceedings of 17th International Conference on Indium Phosphide and Related Materials
Start page: 445
End page: 448
DOI: 10.1109/ICIPRM.2005.1517527
Abstract: We have investigated degradation of metamorphic In_<0.53>Ga_<0.47>As Esaki tunnel diodes. The degradation due to electrode diffusion and impurity interdiffusion is more prominent than that of lattice-matched In_<0.53>Ga_<0.47>As Esaki tunnel diodes.
Rights: Copyright ⓒ 2005 IEEE. Reprinted from Proceedings of 17th International Conference on Indium Phosphide and Related Materials, 2005. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
URI: http://hdl.handle.net/10119/4158
Material Type: publisher
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
142-6.pdf551KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology