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http://hdl.handle.net/10119/4158
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| タイトル: | Degradation of metamorphic InGaAs Esaki tunnel diodes due to electrode diffusion and impurity interdiffusion |
| 著者: | Ono, Hideki
Yanagita, Masashi
Taniguchi, Satoshi
Suzuki, Toshi-kazu |
| 発行日: | 2005 |
| 出版者: | Institute of Electrical and Electronics Engineers (IEEE) |
| 誌名: | Proceedings of 17th International Conference on Indium Phosphide and Related Materials |
| 開始ページ: | 445 |
| 終了ページ: | 448 |
| DOI: | 10.1109/ICIPRM.2005.1517527 |
| 抄録: | We have investigated degradation of metamorphic In_<0.53>Ga_<0.47>As Esaki tunnel diodes. The degradation due to electrode diffusion and impurity interdiffusion is more prominent than that of lattice-matched In_<0.53>Ga_<0.47>As Esaki tunnel diodes. |
| Rights: | Copyright ⓒ 2005 IEEE. Reprinted from Proceedings of 17th International Conference on Indium Phosphide and Related Materials, 2005. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. |
| URI: | http://hdl.handle.net/10119/4158 |
| 資料タイプ: | publisher |
| 出現コレクション: | g10-1. 雑誌掲載論文 (Journal Articles)
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