JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4407

Title: Raman Scattering from Trimethylaluminum (TMA) :Free and Adsorbed Molecules on GaAs(100)
Authors: Sano, H.
Sakai, J.
Mizutani, G.
Ushioda, S.
Issue Date: 1993
Publisher: Elsevier
Magazine name: Journal of Electron Spectroscopy and Related Phenomena
Volume: 64-65
Start page: 865
End page: 870
DOI: 10.1016/0368-2048(93)80161-E
Abstract: We have measured the Raman scattering from an adsorbed layer of trimethylaluminum (TMA) on GaAs(100) as a function of coverage down to 17 monolayers. The absolute scattering cross-section of the CH_3-symmetric stretching mode of TMA was found to be 8.0 × 10^<-29> cm2/dimer sr line. The corresponding cross-section in the gaseous state is 2.6 × 10^<-29> cm2/dimer sr line. The observed enhancement of the cross-section in the multilayer is due to the effect of the molecular field. The scattering cross-section of the CH_3-symmetric stretching mode of gaseous trimethylgallium (TMG) is 1.3 × 10^<-29> cm2/molecule sr line. Based on these data on the absolute Raman cross-sections, we expect that the monolayer of these molecules on GaAs would be extremely difficult to observe by Raman scattering in a crystal growing environment.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. H. Sano, J. Sakai, G. Mizutani, and S. Ushioda, Journal of Electron Spectroscopy and Related Phenomena, 64-65, 1993, 865-870, http://dx.doi.org/10.1016/0368-2048(93)80161-E
URI: http://hdl.handle.net/10119/4407
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
120-18.pdf1384KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology